IGBT (Insulated Gate Bipolar Transistor), an insulated gate bipolar transistor, is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar triode) and MOS (insulated gate fetone), which combines the high input impedance of MOSFETs with the low on-voltage drop of GTR. GTR saturation voltage is reduced, the current carrying density is large, but the driving current is large; the MOSFET drive power is very small, the switching speed is fast, but the on-voltage drop is large, and the current carrying density is small. IGBTs combine the advantages of both devices with low drive power and reduced saturation voltage. Ideal for converter systems with DC voltage of 600V and above such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields.
IGBT module is a modular semiconductor product formed by IGBT (insulated gate bipolar transistor chip) and FWD (freewheeling diode chip) bridging and packaging through specific circuits; the packaged IGBT module is directly applied to inverters, UPS uninterruptible power supplies and other equipment;
IGBT module has the characteristics of energy saving, easy installation and maintenance, heat dissipation and stability; most of the current sales on the market are such modular products, generally speaking, IGBT also refers to IGBT modules; with the advancement of energy conservation and environmental protection concepts, such products will be more and more common in the market;
IGBT is the core device of energy conversion and transmission, commonly known as the "CPU" of power electronic devices, as a national strategic emerging industry, it is widely used in rail transit, smart grid, aerospace, electric vehicles and new energy equipment.
Manufacturing processes and processes for igbt modules
Manufacturing Process:
Screen Printing Automatic SMD Vacuum Reflow Welding Ultrasonic Cleaning Defect Detection (X-ray) Automatic Lead Bonding Laser Marking Housing Plastic Sealing Housing Filling and Curing Terminal Forming Function Test IGBT Module
Packaging is to package multiple IGBT integrated package together to improve the service life and reliability of IGBT modules, smaller size, higher efficiency, higher reliability is the market demand trend for IGBT modules, which needs to be developed and applied by IGBT module packaging technology. At present, the popular IGBT module packaging form is lead type, solder needle type, flat plate type, disc type four, common module packaging technology is many, the name of each manufacturer is also different, such as Infineon's 62mm package, TP34, DP70 and so on.
The IGBT module has 3 connection sections: aluminum wire bonding points on the silicon wafer, welding surfaces for the silicon wafer and ceramic insulated substrate, and welding surfaces for the ceramic insulated substrate and copper substrate. The damage to these contacts is caused by the stress caused by the mismatch between the thermal expansion coefficients (C committed) of the two materials on the contact surface and the thermal deterioration of the material.
There are many IGBT module packaging technologies, but they can be summarized as thermal management design, ultrasonic terminal soldering technology and highly reliable soldering technology:
(1) In terms of thermal management design, the chip layout and size were optimized by using the thermal simulation technology of the package, so that the output power was about 10% higher than the original under the same ΔTjc conditions.
(2) Ultrasonic terminal welding technology can directly weld the copper pad and copper bonding lead wire connected by the soldering method. Compared with the soldering method, this technology not only has a high melting point and high strength, but also does not have a linear expansion coefficient difference, which can obtain high reliability. Participants do not need to be specially prepared to adopt the technology. Fujifilm has always been manufactured in an environment close to vacuum in an ordinary cleanroom, and this method is not too problematic.
(3) High reliability soldering technology. Normal Sn-Ag welds have a 35% reduction in strength after 300 temperature cycles, while Sn-Ag-In and Sn-Sb welds do not decrease after the same cycle. These technologies are "highly reliable at high temperatures.")
IGBT module packaging process: primary soldering - primary bond line - secondary soldering - secondary bond --- assembly - on the shell, coated with sealant - curing --- silicone filler gel --- aging screening. These processes are not cured, depending on the specific modules, some may not require multiple welding or bonding, some need to, and some may have other processes. The above is only some of the main process processes, and there are other auxiliary processes, such as plasma treatment, ultrasound scanning, testing, marking and so on.
The role of IGBT module packaging IGBT module packaging adopts colloid isolation technology to prevent explosion during operation; The second is that the electrode structure adopts a spring structure, which can alleviate the formation of cracks on the substrate during the installation process, resulting in cracks in the substrate; The third is to process and design the base plate, so that the bottom plate is in close contact with the radiator, which improves the thermal cycling capacity of the module.
The design of the baseplate is to choose the middle point design, under our specified installation conditions, its amplitude will disappear, to achieve a better connection to the heat sink. Later in the installation process we see that it plays a role in the installation process. Product performance, we apply IGBT process, the opening process is relatively gentle on IGBT, shutdown process is more demanding. Most of the damage is caused by shutdown that exceeds the rated value.
Technical details of the IGBT module packaging process
The first point is that when it comes to welding technology, if we want to achieve a good thermal conductivity, when we weld the chip and the DBC substrate, the welding quality directly affects the heat transfer during operation. From the structure diagram above we can see that the welding is achieved by vacuum welding technology. You can see the void rate of the DBC and the substrate. This will not lead to thermal accumulation and no damage to the IGBT module.
The second is bonding technology to achieve data deformation. The role of bonding is mainly to achieve electrical connections. In the case of high currents of 600 amps and 1200 amps, the IGBT implements all currents, the length of the bonding is very important, the trap determines the size of the module, and the size of the current realization parameters. In the process of application, if the bond is trapped and the length is not appropriate, it will cause uneven current distribution, which is easy to cause damage to the IGBT module. The installation of the shell, because the IGBT itself chip is not in direct contact with the air and other environments, to achieve insulation performance, mainly through the shell to achieve. The shell requires that it has the characteristics of high temperature resistance, deformation resistance, moisture resistance, corrosion resistance and so on in the selection of materials.
The third is tank sealing technology, if IGBT is applied in high-speed rail, emus, locomotive, locomotive running process, the environment is very harsh, we may encounter rainy days, encounter humidity, plateau, or dust is relatively large, how to achieve IGBT chip isolation from the external environment, to achieve good operation reliability, its can sealing material plays a very important role. It is required to choose a material with stable and non-corrosion performance, insulation, heat dissipation and other capabilities, small expansion rate and small shrinkage rate. When we packaged on a large scale, the part of the filler material was added to the buffer layer, and the chip was constantly heated and cooled during operation. In this process, if the coefficient of thermal expansion of the filler material is inconsistent with the shell, it is possible to cause delamination, and adding a filler similar to a buffering effect in the middle of the IGBT module can prevent the delamination phenomenon.
The fourth is the quality control link, quality control after the completion of all high-power IGBT, the need to test all aspects of performance, which is also the root of quality assurance, can be through the flat facilities, the bottom plate for flatness test, flatness After IGBT installation, all heat dissipation is the bottom plate is transmitted to the radiator. The better the flatness, the better the heat sink contact performance and the better the thermal conductivity. The second is a push-pull test, which tests the strength of the bonding point. The third hardness tester, the hardness of the main electrode, can not be too hard, can not be too soft. Ultrasonic scanning, mainly on the welding process, welding after the product quality of the cavity rate to do a scan. This is also very good control for thermal conductivity. The monitoring means of the electrical aspects of the IGBT module are mainly to monitor whether the parameters and characteristics of the IGBT module can meet the requirements of our design, and the second insulation test.
#盘点国内IGBT企业 #
Power semiconductors are a segment of the semiconductor industry, although they are not as well known to the public as integrated circuits, but their importance cannot be ignored. IGBT is a kind of power semiconductor, as the "CPU" in electronic power devices and systems, the main force of high efficiency, energy saving and emission reduction.
Looking back at the technological development of IGBT, IGBT has mainly undergone 7 generations of technology and process improvement.
IGBT, insulated gate bipolar transistor, is a BJT (bipolar triode) and MOS (insulated gate fetone) composed of a composite fully controlled voltage-driven power semiconductor device, with high frequency, high voltage, high current, easy to switch and other excellent performance, is known as the "CPU" of power converter devices.
Research data show that the development of electric vehicles will drive the total value of the IGBT market to continue to grow, and it is estimated that the total market value of IGBT will exceed $5.2 billion in 2021. China as the world's largest IGBT demand market, the main market share is occupied by European, American, Japanese enterprises, but after years of efforts, has established a complete IGBT industry chain, the following will be in accordance with the IDM, design, manufacturing, module classification inventory of the main enterprises of the domestic IGBT industry chain -
IDM
CRRC Era Electric
Zhuzhou CRRC Times Electric Co., Ltd. is a joint-stock enterprise of CRRC, its predecessor and parent company - CRRC Zhuzhou Electric Locomotive Research Institute Co., Ltd. was founded in 1959, which has now formed a set of high-power IGBT industrialization base integrating IGBT product design, chip manufacturing and other complete sets of technology research, development and integration.
BYD Microelectronics
In 2003, BYD established Shenzhen BYD Microelectronics Co., Ltd. (its "Sixth Division"), which is committed to the development of integrated circuits and power devices and provides a complete set of solutions for product applications. In 2005, BYD formally established the IGBT R&D team, and in 2007, it established the IGBT module production line and completed the sample assembly of the first electric vehicle IGBT module.
Silan Wei
Hangzhou Silan Microelectronics Co., Ltd. was established in 1997, starting from the integrated circuit chip design business, gradually built a chip manufacturing platform with characteristic processes, and has extended the technology and manufacturing platform to the packaging field of power devices, power modules and MEMS sensors, and established a relatively complete IDM business model.
Hua microelectronics
Jilin Hua Microelectronics Co., Ltd. was established in 1999, set power semiconductor device design and development, chip processing, packaging testing and product marketing as one, the official website information shows that it has 4 inches, 5 inches and 6 inches and other power semiconductor discrete devices and IC chip production lines, chip processing capacity of 4 million pieces per year, packaging resources of 2.4 billion / year, modules 3.6 million / year.
Chongqing China Resources Micro
China Resources Microelectronics (Chongqing) Co., Ltd., formerly AVIC (Chongqing) Microelectronics Co., Ltd., integrates semiconductor design, research and development, manufacturing and service, with power semiconductor devices and power/analog integrated circuits as the industrial base, facing the industrial electronics, consumer electronics, automotive electronics, and 5G communication markets. It has a technology development and manufacturing platform for power devices, GaN, MEMS sensors, etc.
Taiji shares
Founded in 2004, Hubei Taiji Semiconductor Co., Ltd. is one of the few enterprises in the field of high-power semiconductor devices in China that has mastered the front (diffusion) technology, the middle way (chip manufacturing) technology, the back road (packaging and testing) technology, and mastered the core technology of high-power semiconductor device design, manufacturing and the formation of large-scale production.
Yangjie Technology
Yangzhou Yangjie Electronic Technology Co., Ltd. was established in August 2006, is committed to the power semiconductor chip and device manufacturing, integrated circuit packaging and testing and other fields of industrial development, the main products for all kinds of power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc.
Kodak Semiconductor
Founded in 2007, Keda Semiconductor Co., Ltd. is a high-tech enterprise invested and established by Keda Group, mainly engaged in the design, production and sales of new power semiconductor devices (power electronic devices) such as IGBT, FRD, MOSFET, etc., and has sales centers in Shenzhen, Zhejiang, Shandong and other regions.
devise
Zhongke Junxin
Founded in 2011, Jiangsu Zhongke Junxin Technology Co., Ltd. is a Sino-foreign joint venture high-tech enterprise focusing on the research and development of new power electronic chips such as IGBT and FRD. Zhongke Junxin was formerly known as the Institute of Microelectronics of the Chinese Academy of Sciences, the Institute of Microelectronics of the Chinese Academy of Sciences, the China Internet of Things Research and Development Center and the Chengdu University of Electronic Science and Technology, which began in the 1980s.
Daxin Semiconductor
Ningbo Daxin Semiconductor Co., Ltd. was established in 2013, is a Sino-foreign joint venture high-tech company founded by Dr. Returnee, mainly engaged in IGBT, MOSFET, FRD and other power semiconductor chips and devices design, manufacturing and sales, with IGBT, MOSFET and FRD and other power semiconductor chip design and process integration technology, built IGBT product performance testing, application and reliability laboratory, Has a complete testing and manufacturing means of IGBT module R & D production line.
Violet microelectronics
Founded in 2006, Wuxi Unigroup Microelectronics Co., Ltd. (formerly Wuxi Tongfang Microelectronics Co., Ltd.) is a high-tech enterprise invested by Unigroup Tongxin Microelectronics Co., Ltd., and is an integrated circuit design enterprise focusing on the design and development, chip processing, packaging and testing and product sales of advanced semiconductor power devices and integrated circuits.
Wuxi New Clean Energy
Wuxi New Clean Energy Co., Ltd. was established in 2013, the main business for MOSFET, IGBT and other semiconductor power devices R & D design and sales, the main products according to whether the package can be divided into chips and package finished products, widely used in consumer electronics, automotive electronics, industrial electronics and new energy vehicles / charging piles, intelligent equipment manufacturing, Internet of Things, photovoltaic new energy and other fields.
Core Pai Technology
Founded in 2008, Xi'an Xinpai Electronic Technology Co., Ltd. is a high-tech enterprise integrating R&D, production and sales, including a full range of low-voltage to high-voltage MOSFETs, IGBTs, diodes, bridge stacks and power management ICs. Headquartered in Xi'an, it has a provincial key laboratory Xi'an Semiconductor Power Device Testing and Application Center.
fabricate
Huahong Hongli
Shanghai Huahong Hongli Semiconductor Manufacturing Co., Ltd. was newly established by the merger of the former Shanghai Huahong NEC Electronics Co., Ltd. and Shanghai Hongli Semiconductor Manufacturing Co., Ltd., and is the world's first 8-inch integrated circuit chip manufacturer to provide field-cut insulated gate bipolar transistor (FS IGBT) mass production technology.
Shanghai advanced
Shanghai Advanced Semiconductor Manufacturing Co., Ltd., formerly known as Shanghai Philips Semiconductor Co., Ltd., which was established in 1988 as a Sino-Dutch joint venture, has 5-inch, 6-inch and 8-inch wafer production lines, focusing on the manufacture of analog circuits and power devices, and has provided IGBT domestic and foreign foundry business since 2004.
SMIC
SMIC International Integrated Circuit Manufacturing Co., Ltd. is the most comprehensive, complete, largest and transnational integrated circuit manufacturing enterprise in Chinese mainland technology, providing 0.35 micron to 28 nanometer 8-inch and 12-inch chip foundry and technical services.
Founder Microelectronics
Founded in 2003 by Founder Group and other investors, Shenzhen Founder Microelectronics Co., Ltd. focuses on providing customers with wafer fabrication technology in the fields of power discrete devices (such as DMOS, IGBT, SBD and FRD) and power integrated circuits (such as BiCMOS, BCD and HV CMOS).
China Resources Shanghua
Wuxi Cr Resources Shanghua Technology Co., Ltd. is a subsidiary of China Resources Microelectronics Co., Ltd., which is responsible for the semiconductor business of China Resources Group. CR Shanghua provides customers with a wide range of wafer manufacturing technologies, including BCD, Mixed-Signal, HV CMOS, RFCMOS, Embedded-NVM, BiCMOS, Logic, MOSFET, IGBT, SOI, MEMS, Bipolar and a series of customized process platforms.
Module
Jiaxing Star
Jiaxing Star Semiconductor Co., Ltd. was established in April 2005, is a professional engaged in power semiconductor components, especially IGBT module research and development, production and sales services of national high-tech enterprises, its main products for power semiconductor components, including IGBT, MOSFET, IPM, FRD, SiC, etc., has successfully developed nearly 600 kinds of IGBT module products, voltage level covering 100V ~ 3300V
Vivo Semiconductors
Shenzhen Xinneng Semiconductor Technology Co., Ltd. was established in 2013, jointly invested by Shenzhen Zhengxuan Technology, Shenzhen State-owned Assets Supervision and Administration Commission, Shenzhen Talent Innovation Fund, Dachen Venture Capital, Fangguang Capital, Xiamen Falcon and other well-known institutions, is committed to the research and development, application and sales of IGBT chips, IGBT driver chips and high-power intelligent power modules.
Xi'an Yongdian
Founded in 2005, Xi'an CRRC Yongdian Electric Co., Ltd. is a wholly-owned high-tech enterprise specializing in the research and development, production, sales and service of power electronic products, the main products include IGBT module, IPM module, rectifier, thyristor, combination components and other power semiconductor devices, as well as converters, power modules, urban rail ground rectifier devices, subway single guide devices, chargers and other devices.
Macro Micro Technology
Jiangsu Hongwei Technology Co., Ltd. was established in August 2006, based on the power electronic components industry, the business scope includes the design, research and development, production and sales of new power semiconductor chips, discrete devices and modules, such as FRED, VDMOS, IGBT chips, discrete devices, standard modules and user-defined modules (CSPM), and provides modular design, manufacturing and system solutions for energy-efficient power electronic devices.
Weihai Xinjia
Weihai Xinjia Electronics Co., Ltd. was established in 2004, the registered capital of 20 million yuan, is specialized in new power electronic devices and their applications of the whole machine product design, research and development, production, sales of national high-tech enterprises.
Yinmao Microelectronics
Nanjing Yinmao Microelectronics Manufacturing Co., Ltd. was established in November 2007, is the holding company of Jiangsu Yinmao (Holdings) Group Co., Ltd. According to the official website, the company's first phase of the project to research and development, manufacturing and sales of new power electronic modules with independent intellectual property rights, fully airtight and semi-airtight high-reliability hybrid circuit electronic devices, large-scale converter technology core components as the main business, with an annual output of 650,000 pieces of general power modules and high-voltage high-voltage high-power modules more than 100,000 pieces of production capacity, is currently one of the largest domestic power electronic power module production base.
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