Abstract: According to foreign media reports, in the IEDM 2021 held in San Francisco, California, USA, IBM and Samsung jointly launched a technology called vertical transmission field effect transistor (VTFET). This technology stacks transistors vertically and changes the current to flow vertically, which can increase the number and density of transistors again, greatly improve the efficiency of power supply, and break through the bottleneck currently faced in the design of the 1nm process.
According to foreign media reports, in the IEDM 2021 held in San Francisco, California, USA, IBM and Samsung jointly launched a technology called vertical transmission field effect transistor (VTFET). This technology stacks transistors vertically and changes the current to flow vertically, which can increase the number and density of transistors again, greatly improve the efficiency of power supply, and break through the bottleneck currently faced in the design of the 1nm process.
The report emphasizes that compared to the traditional design of placing transistors horizontally, vertical transmission field effect transistors will increase the stacking density of the number of transistors and increase the operation speed by twice, while reducing power losses by 85% under the same performance conditions by allowing current to flow vertically.
IBM and Samsung pointed out that the process technology will be able to reach the level of standby endurance of a whole week in the future when the mobile phone is on a single charge. In addition, this can also make some energy-intensive work, such as encryption work, more power-efficient, further reducing the environmental impact.
However, IBM and Samsung have not yet disclosed when they expect to start applying vertical transmission field-effect transistor designs to actual products. But market participants expect further news in a very short time.
Compared with the publication of IBM and Samsung's technical achievements, TSMC, a leading wafer foundry, has also announced in May 2021 that it has completed research with National Taiwan University and MIT to break through the limits of 1nm process production through the characteristics of bismuth metal, so that process technology can be explored below 1nm.
In addition, Intel has also announced its future process technology development layout, in addition to the existing nano-level process node design, the next will also begin to layout the Development of Amy-level Process Technology, and it is expected to enter the 20A Process Technology Node as soon as 2024.
Source: technews
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