Industry sources say that Samsung will launch 200-layer + NAND flash memory by the end of the year

Image source: businesskorea

According to microgrid news, global semiconductor companies have launched fierce technical competition in order to take the lead in mass production of more than 200 layers of NAND flash memory. Samsung Electronics plans to launch more than 200 layers of NAND flash memory at the end of 2022 or the first half of 2023, and start mass production in the first half of next year.

According to businesskorea, Samsung Electronics originally planned to start mass production of 176 layers of NAND in late 2021, but considering the market situation, it was postponed to the first quarter of 2022. However, Micron in the United States has begun mass production of 176 layers of NAND, and industry insiders predict that Samsung Electronics will accelerate the pace of mass production of NAND flash memory above 200 layers to regain the technological leadership taken away by Micron.

Industry insiders said that Samsung Electronics will superimpose 96 layers on the 128-layer monolithic memory and launch 224 layers of NAND flash memory. Compared with layer 176, the productivity and data transfer speed of layer 224 NAND flash memory will be increased by 30%.

In addition, Micron and SK Hynix are also accelerating the development of NAND flash memory above the 200-layer level.

(Proofreading/Yuki)