Abstract: January 14 news, in 2021, the domestic DRAM memory chip manufacturer Hefei Changxin DRAM production capacity has reached 60,000 wafers / month, is expected to double this year's production capacity, to reach the level of 120,000 wafers / month, but also will launch more advanced 17nm process DDR5 / LPDDR5 and other memory chips.
January 14 news, in 2021, the domestic DRAM memory chip manufacturer Hefei Changxin DRAM production capacity has reached 60,000 wafers / month, is expected to double this year's production capacity, to reach the level of 120,000 wafers / month, but also will launch more advanced 17nm process DDR5 / LPDDR5 and other memory chips.
According to reports, Hefei Changxin Storage, as an integrated memory manufacturer, specializes in the design, development, production and sales of dynamic random access memory chips (DRAM), and has built the first 12-inch fab and put into production, developed the first 8Gb DDR4 chip in China in 2018, mass production in Q3 2019, and a number of domestic memory in 2020 have used Changxin's particles.
In terms of production capacity, Changxin has achieved the targets of 45,000 wafers/month and 60,000 wafers/month in 2020 and 2021, respectively, the production capacity target for 2022 is 120,000 wafers/month, and the future production capacity target is 300,000 wafers/month.
What is the global production capacity target of domestic memory this year? Previously, TrendForce predicted that by the end of 2021, the global memory capacity will reach 1.5 million wafers/month, Samsung's production capacity will exceed 555,000 wafers/month, SK Hynix is 360,000 wafers/month, and Micron also has 355,000 wafers/month.
If the domestic memory production capacity is completed as scheduled this year, then Hefei Changxin can enter the fourth place in the world, but the gap with the top three is still very large.
Of course, domestic memory expansion capacity is still a good thing, in the words of netizens is that the country has its own memory chip production, it is not afraid of other people's memory factory fire, power outage, earthquake and other disasters.
In addition to capacity expansion, the technical level of domestic memory is also catching up, the current Changxin mass production is mainly the first generation of 10nm level process 10G1, the actual level should be 19nm, mainly to DDR4, LPDDR4-based, 2020 reports mentioned the research and development of 17nm and below the process of DDR5, LPDDR5 and other memory, this is the 10G3 generation process, the future there is 10G5 process, in addition to DDR5, LPDDR5 there are GDDR6 memory.
Source: Fast Technology