Due to contamination of materials for flash memory chip production, Western Digital has notified customers to raise the price of flash memory last month[1]. Micron has notified the NAND chip contract and the spot price have risen. Among them, the contract price rose by 17% to 18%, and the spot price increased by more than 25%[2]. TrendForce expects NAND flash memory prices to soar by 5% to 10% in the second quarter due to material contamination [3].
However, the frequent price of memory and flash memory, mostly from international manufacturers, few domestic brands.
This article is the fourth article in the "domestic substitution" series planned by "Fruit Shell Hard Technology", focusing on the domestic substitution of semiconductor memory. In this article, you will learn: the technical details of different types of semiconductor memory, the basic situation at home and abroad in the market, and the development of domestic semiconductor memory.
Fu Bin 丨 Author
Edited by Li Tuoshu
Fruit shell hard technology 丨 planning
Memory chips are divided into two broad categories
Memory is important to humans, and the human brain weighing 1.4 kg is capable of storing more than 2.5 petabytes (petabytes) of information [4]. Storing information is equally important for modern electronic systems.
In 1947, the University of Manchester used the Williams-Kilburn tube to record data points, after which memory began to become fully electronic and underwent several generations of magnetic storage technology iterations. Beginning in the 1970s, semiconductor memories gradually became mainstream.[5]
Today, semiconductor memory is the largest segment of the semiconductor industry, accounting for about one-third of the global semiconductor industry.[6] According to statistics, by 2025, the world will generate 175 ZB (10 trillion bytes) of data [7], which will drive semiconductor memory to continue to grow. IC Insights predicts that semiconductor memory will maintain a compound annual growth rate of 6.8% over the next five years [8].
In the field of semiconductors, memory is divided into two categories: volatile memory (memory) and nonvolatile memory (external memory), the former will disappear immediately when powered down, and the latter will not be affected by power failure, and store data for a long time.
Volatile memory has not changed significantly in the past few decades, and is still dominated by SRAM (static random access memory) and DRAM (dynamic random access memory), while non-volatile memory (NVM) is constantly emerging new technologies .[9]
Semiconductor memory classification and global market share, mapping 丨 fruit shell hard technology, data source 丨 Yole
Although the subdivisions of semiconductor memories are dizzying, in fact, NAND Flash (NAND flash memory) and DRAM two mainstream memory account for about 96% of the overall global memory market share, NOR Flash (NOR flash memory) and SRAM because of their unique characteristics dominate the market, the rest of the wide range of technologies to cope with the requirements of different end systems and markets [10].
Comparison of the four major storage types
Depending on key parameters such as capacity, transfer speed, and erasability, different memories have their own responsibilities, in terms of the memory used in computer systems: SRAM is fast enough to be used as a cache for a central processing unit (CPU), DRAM is inexpensive and has a large capacity, and is often used as memory, NOR Flash is usually used for code storage, and NAND Flash is used for large data volume storage [11].
Typical memory hierarchies in computer systems and the use of storage technology, cartography 丨 fruit shell hard technology
The semiconductor memory industry chain is similar to integrated circuits, Samsung (Samsung), Micron (Micron), Western Digital Corp (WDC), SK hynix and KIOXIA Several international giants belong to the traditional IDM (design-manufacturing vertical integration) model of enterprises, from wafer production, module / product development are completed independently. The new model that is popular now is to split the industrial chain into Three links: Formulas (design), Foundry (manufacturing), and Test (testing), and domestic memory chip companies are basically Formulass (design) models, and only a few have wafer production capacity.
Kingston, Rainbow, Weigang, etc., which are often seen on shopping platforms, belong to storage brands and are more downstream. According to the customized needs of the subdivision industry, these brands will carry out wafer analysis, main control chip selection and customization, firmware development, package design, chip testing, back-end technical support, etc., transform standardized storage wafers into storage products, expand the application scenarios of semiconductor memory, improve the applicability of semiconductor memory in various application scenarios, and promote the productization of storage wafers, which is an important link in the semiconductor storage industry chain [12].
Schematic diagram of storage industry chain, source 丨Jiangpolong electronic prospectus
The enterprises involved in this article are related to memory chips, and enterprises related to the industrial chain can refer to the following table.
List of storage-related enterprises (incomplete statistics), watchmaking 丨 fruit shell hard technology
A pair of friends of volatile memory
DRAM and SRAM are a good couple in volatile memory, and both belong to RAM (Random Access Memory) memory. RAM refers to random access memory, and before the advent of semiconductor memory, access to old-fashioned tape, optical disk, and disk was performed sequentially, while the randomness of RAM meant that data was stored independently of physical location.[13]
They also have two distinct structures and are named after their own characteristics: S for SRAM is the abbreviation for Static, and D for DRAM is the abbreviation for Dynamic.
DRAM consists of many repeating bit cells, each basic unit consists of a capacitor and a transistor (also known as a 1T1C structure), the capacitor is charged and discharged corresponding to the binary numbers 0 and 1, and the transistor is used to control the charge and discharge of the capacitor. Due to the leakage of capacitors, DRAM must be charged to maintain potential (i.e., charged) before the data changes or loses power, resulting in drAM being referred to as "dynamic ramchasma".[14]
The basic unit of SRAM consists of at least 6 transistors: 4 FETs (M1, M2, M3, M4) form two cross-coupled inverters, and 2 FETs (M5, M6) control switches for reading and writing bit lines (Bit Lines), through which they form a latch (flip-flop) and lock the binary numbers 0 and 1 when powered on, hence the SRAM is called "static random memory". In addition to the six tubes, SRAM can also be composed of 8 tubes, 10 tubes, or even more transistors.
The reason why DRAM and SRAM have never been eliminated in the long history is because they have their own expertise and are suitable for different application scenarios: DRAM has a simple structure, can have a very high density, a higher capacity per unit volume, and a lower cost, but DRAM access speed is slower, and SRAM characteristics are completely opposite.
Comparison of advantages and disadvantages of DRAM and SRAM
Domestic DRAM with a lot of fate
At present, we can contact a variety of memory concept products in life are DRAM, the leading standards agency JEDEC (Solid State Technology Association) defines DRAM as standard DDR, mobile DDR, graphics DDR three categories, respectively, refers to computer memory, mobile phone storage, graphics card video memory.
First, the standard DDR: support wider channel width, higher density and different shape sizes, for servers, cloud computing, networking, laptops, desktops and other consumer applications, JEDEC has announced the highest standard is DDR5.
DDR~DDR5 specification comparison, image source 丨 Semiconductor
Second, mobile DDR: provides narrower channel width and lower power consumption, for mobile devices and automotive and other areas that are sensitive to specifications and power consumption, the highest standard that JEDEC has published is LPDDR5.
LPDDR~LPDDR5 specification comparison, image source 丨 Semiconductor
Graphics DDR: Provides extremely high throughput, data-intensive applications for graphics applications, data center acceleration, and AI, and the highest standard currently published by JEDEC is GDDR6 [16]. In addition, many DDR chips are stacked and packaged together with the GPU to form another form of video memory, that is, HBM, and the highest standard currently published by JEDEC is HBM3.
Video memory upgrade history, image source 丨WCCFTech
According to Omdia (IHS Markit) data, the global DRAM market achieved sales of $66.383 billion in 2020, a slight increase of 6.75% over 2019, of which the market share of Samsung, SK Hynix and Micron exceeded 90%[17].
The reason why there is an oligopoly situation is because DRAM has the characteristics of high investment, high risk, long-term and super-large scale, while the development history of DRAM is also full of bloody atmosphere, and big fish continue to eat small fish, forming the existing pattern. In the 1980s, the market had more than thirty players, and by 2019 there were only a handful of players with market share.
DRAM industry change, source 丨 Founder Securities
DRAM has been a major player in the past 40 years, the source of the picture 丨 Guoyuan Securities
DRAM has a very high entry threshold, which not only requires huge funds to support long-term research and development, but more difficultly, international giants can also share the cost of research and development through scale effects and constantly "bury mines" on patents to restrict the development of competitors.
In contrast, domestic DRAM chips started late, which will inevitably be restricted in patents. Looking at the development of domestic DRAM, it is a history of blood and tears around patents.
Changxin Storage is a usable division that has been saved up for 20 years, and its DRAM technology mainly comes from the bankrupt German DRAM manufacturer Qimonda, and the other part comes from former employees of the former Japanese DRAM manufacturer Erbida Company.
At present, Changxin Storage's parent company continues to increase its capital, and it is expected that the production capacity will reach 120,000 pieces per month in 2022. According to TrendForce forecast, by the end of 2021, the global DRAM capacity will be about 1.5 million wafers/month, Samsung's production capacity will exceed 555,000 wafers/month, SK Hynix will exceed 360,000 wafers/month, and Micron will exceed 355,000 wafers/month. If Changxin's storage capacity meets expectations, the ranking can jump to the fourth place in the world[20].
The predecessor of Tsinghua Unigroup was Xi'an Huaxin Semiconductor, and Xi'an Huaxin was established in 2009 by Inspur Group through the acquisition of Qimonda Technology (Xi'an) Co., Ltd., which was originally split and independent of Infineon's technology memory division.
In addition to the above three companies, TESMicro also has mass production of DDR3-related products, Beijing Junzheng acquired Beijing Silicon (ISSI) to form a "computing + storage + simulation" technology pattern, and GigaDevice is planning DDR3 product research and development.
DOMESTIC AND FOREIGN DRAM MARKET SITUATION, WATCHMAKING 丨 FRUIT SHELL HARD TECHNOLOGY
DRAM has a broad market in the future, especially under the tone of chip lack, which is a good opportunity for domestic expansion. According to TrendForce, the DRAM industry's total global output value will reach $91.54 billion in 2022. According to Yole's forecast, the global DRAM market will grow at a compound annual growth rate of 15% from 2020 to 2026, 5G will drive the demand for LPDDR, the Internet of Things, cloud services and data center DRAM demand will grow, and automotive autonomous driving will become a new battlefield for DRAM [22].
DRAM market situation, image source 丨Youle
Unshakeable SRAM
SRAM has a unique structure, and no new product has been able to shake its application in the field of caching. But SRAM is expensive, and the global market share is always small.
In addition to being able to be used in the cache, SRAM is also generally used in FPGAs, and since lookup tables (LUTs) are mainly suitable for SRAM production, most FPGAs are currently based on the SRAM process [23]. In addition, SRAM is particularly suitable for use in memory-computing technology, because SRAM is the fastest of all storage types, has no write limit, and is compatible with advanced processes, thus achieving higher energy efficiency ratio and face-to-face ratio. (Reference can be made to the chip of storage and computing: "Chip of Memory and Computing, Potential Stock in the Era of Artificial Intelligence")
By 2025, the global SRAM market size will reach $527 million, with a CAGR of 4.45%[24]. The main players in SRAM are Renesas, Cypress (acquired by Infineon), ON Semiconductor (ONsemi), Microchip and other foreign manufacturers. In 2021, Beijing Junzheng acquired Beijing Silicon Cheng (ISSI), supplementing the product path of SRAM.
Polarized non-volatile memory
Non-volatile memory continues to emerge new technologies, early technologies are gradually eliminated due to defects, the existing mature technology, there are three kinds of non-volatile memory with a certain scale market:
EEPROM: Is a non-volatile memory that supports electrical erasability and plug-and-play, with small size, simple interface, reliable data preservation, online rewriting, and low power consumption.
NOR Flash: belongs to the code flash memory chip, is one of the main application technologies in the field of embedded memory chips, used to store code and part of the data, with random storage, high reliability, fast reading speed, executable code and other characteristics, in the low and medium capacity applications with performance and cost advantages. Because terminal electronic products have internal instruction execution, system data exchange, user data storage, manufacturer configuration data storage and other requirements, it must be equipped with corresponding capacity of code memory and data memory, so it is an indispensable and important component [25].
NAND Flash: It belongs to the data flash memory chip, which is the core of massive data, which can achieve mass storage, high write and erase speed, and is mostly used in large-capacity data storage. There are four different storage technologies of SLC, MLC, TLC and QLC, which represent the data stored in each storage unit in turn as 1 bit, 2 bit, 3 bit and 4 bit. From SLC to QLC storage density gradually increases, the cost per bit will also be reduced. In contrast, performance, power consumption, reliability, and P/E cycles (number of erase cycles, i.e., lifetime) decrease.[26]
Among them, SLC and MLC/TLC/QLC form two completely different tracks, this is because SLC technology is older, it is not worth converting SLC into more modern technology, but the life and reliability of SLC are optimal, so it still has a certain market value.
NAND will be subject to "flash scaling limitations", so in order to improve the performance of NAND Flash, mainly from two directions to break the shackles: first, improve the process node; second, through the vertical superposition of NAND Flash layers to obtain high density and large capacity, and then reduce the unit cost, that is, 3D NAND Flash, similar to mechanical hard disks to increase the number of disks to improve capacity density.
Comparison of various NAND Flash technologies, source丨 World electronic components[27]
Non-volatile memory now presents a bipolar market: international giants are gradually fading out of the small and medium-sized capacity market, doing more profitable large-capacity 3D MLC/TLC/QLC NAND Flash, domestic enterprises belong to the latecomers, and can only enter the market from small and medium-sized capacity EEPROM, NOR Flash, SLC NAND Flash.
NOR Flash and NAND Flash products by capacity, source丨Micron[28]
Comparison of various non-volatile memory, watchmaking 丨 fruit shell hard technology
The high-volume market of immortal fights
Generally speaking, common SSDs, USB flash drives, mobile phone flash memory, and SD cards all belong to the category of large-capacity 3D NAND Flash.
At present, the total share of Samsung Electronics, Jiaoxia, Western Digital, Micron Technology, Intel and SK Hynix in the global NAND Flash market is more than 98%, and they are all IDM manufacturers.
Large-capacity NAND Flash has become a field of contention among the gods, extremely internal volume, preemptively announcing a higher number of superposition layers has become the pleasure of six major manufacturers: Samsung Electronics took the lead in developing a commercial application of 3D NAND Flash in 2013, when there were only 24 layers, by 2020 3D NAND Flash will enter the 176-layer stage, and will even reach more than 600 in the future.
Why is the number of layers key? This is because the degree of standardization of memory chips is high, and the competition for differentiation is small, so manufacturers will focus on the competitive strategy of process and product performance. The most intuitive parameter of flash product performance is the storage density, the more layers means the higher the density, the more advanced the technology, and the lower the cost per GIgabyte, the larger the storage space of the SSD/U disk/mobile phone that consumers can buy. This involves not only NAND Flash itself, but also complex processes such as silicon through-hole (TSV) and laminated packaging (PoP/PoPoP), which are extremely difficult to achieve a high number of superimposed layers [29].
Under the current situation of oligarchy dominating large-capacity 3D NAND Flash, only one enterprise in China, Yangtze River Storage, can compete with international manufacturers. According to TechInsights analysis, the 128-layer stacking process of Yangtze River Storage is enough to compete with other manufacturers' products in terms of capacity, bit density and I/O speed, and the technology has caught up with the industry leader.
Yangtze River storage has experienced lows. In the early days of its establishment, China's first 32-layer 3D NAND Flash, which was produced through independent research and development and international cooperation, could only be regarded as a younger brother in front of the big factory.
In 2018, Changjiang Storage launched the Xtacking crystal stack architecture, which enables the processing of peripheral circuits and storage cells on two independent wafers, which is conducive to the selection of more advanced logic processes, allowing NAND Flash to obtain higher I/O interface speeds and more operational functions.
3D NAND Flash on the market is mainly divided into traditional parallel architecture and CuA (CMOS under Array) architecture, and the peripheral circuit accounts for about 20% to 30% of the chip area, Xtacking places the peripheral circuit on top of the memory unit, thereby achieving higher storage density than the traditional 3D NAND Flash, and the chip area can be reduced by about 25%[31].
International manufacturers and domestic manufacturers compared, watchmaking 丨 fruit shell hard technology
From the current market situation, the overall market capacity demand for NAND Flash in 2022 will grow by another 1.5 to 1.8 times, and it is expected that the inventory in the first half of 2022 will not be able to meet the market demand as soon as possible, and in the future, for emerging applications such as the Internet of Things and electric vehicles, THE NAND Flash capacity demand will not see the ceiling [32].
At present, the storage capacity of the Yangtze River is 80,000 pieces / month, and it is expected to have a wafer production capacity of 100,000 pieces / month in early 2022, while Yangtze River Storage is also building a second fab, which also has a production capacity of 100,000 pieces / month. Through the synergy of process and yield improvement, it is expected that Yangtze River Storage will account for 6% to 8% of the global market share, impacting the title of sixth in the world.[33]
Domestic breakthrough of small and medium-sized capacity market
Due to the excessive performance of the six large-capacity factories in the field of large capacity, domestic players can only play in the small and medium-sized capacity EEPROM, NOR Flash, and SLC NAND Flash fields that the large factories have basically withdrawn. The gap between the mainstream process nodes at home and abroad in small and medium-sized capacity non-volatile memory is small, and the advantages of advanced technology of international large factories cannot be fully utilized, which is conducive to the entry of domestic manufacturers.
Domestic small and medium-sized capacity non-volatile memory enterprises at a glance, watchmaking 丨 fruit shell hard technology
EEPROM
EEPROM and NOR Flash have a certain degree of overlap, and the industry has also discussed the use of NOR Flash to replace EEPROM. However, compared to NOR Flash, EEPROM has a smaller capacity and a higher number of erases, so EEPROM, which has a history of nearly four decades, has not been eliminated, and some applications still need it. However, under the pressure of falling flash memory costs, EEPROM is facing the fate of withdrawing from the stage of history.
EEPROM is mainly used as an auxiliary chip for the module control chip to solve the data storage needs of the module chip, such as the correction parameters of the lens and image stored in the smart phone camera module, the storage parameters and profiles in the LIQUID crystal panel, the storage control parameters in the Bluetooth module, and the storage temperature parameters in the memory module temperature sensor.
EEPROM has gradually upgraded from 0.35μm/7.245μm, 0.18μm/2.88μm, 0.13μm/1.64μm, 0.13μm/1.26μm to 0.13μm/1.01μm in the process and memory units.
According to CCID Consulting, the global market size of EEPROM is only US$714 million[34], and foreign manufacturers include STMicroelectronics (ST), Microchip (Microchip, the acquisition of Atmel), ON Semiconductor (ONsemi), ABLIC (ABLIC), Rohm (Rohm Semiconductor), and there have been few new products launched in recent years. In China, Juchen Semiconductor ranks among the top three in the world, and Huimang Microelectronics, Shanghai Fudan Microelectronics, and Huahong Semiconductor have always occupied a certain share as established manufacturers.
As EEPROM's advantages are gradually weakened, and existing companies have achieved the best costs, there will be almost no new manufacturers, and the market has gradually narrowed.
Global share of the EEPROM market, source 丨puram semiconductor prospectus
NOR Flash
NOR Flash is mainly used in Bluetooth low energy modules, TWS headsets, mobile phone touch and fingerprint, TDDI (touch screen), AMOLED (active matrix organic light-emitting diode panel), wearable devices, car navigation and security chips and other fields.
NOR Flash has been developed for many years, and the process process has been upgraded from 90nm, 65nm, 55nm to 40nm.
Global NOR Flash has experienced a long period of market downturn, so the former leaders Micron and Cypress (now acquired by Infineon) announced in 2016 and 2017 that they would gradually withdraw from the low- and medium-capacity consumer goods and PC markets.
The turning point occurred after the withdrawal of the leader, according to CINNO Research statistics, driven by the demand for 5G construction, new smart devices, remote office, distance education, etc., the rise of wearable devices and Internet of Things devices has improved customer requirements for the power consumption and area of the chip, and in 2020, NOR Flash began to pick up, and the total output value in 2020 also reached 2.62 billion US dollars, an increase of about 6.0% year-on-year [35].
Winbond Electronics, Wanghong Electronics, and Gigabit naturally surpassed Micron and Cypress to become the top three, accounting for 25.4%, 22.5%, and 15.6% of the global NOR Flash share, respectively, and Prom Semiconductor and Wuhan Xinxin also increased by more than 80% year-on-year in 2020, gradually approaching Micron's global market share[36].
2020 global NOR FLash market situation, image source 丨CINNO Research
SLC NAND Flash
SLC NAND Flash is mostly used in industrial, automotive and other applications with high reliability and low latency due to its high read and write speed, long life and high reliability.
For giants such as Samsung and Micron, SLC NAND Flash is a very small market segment, accounting for less than 5% of the entire NAND Flash market share, and it is better to invest in a more profitable large-capacity market. However, for domestic manufacturers, it is also equivalent to a $3 billion market, which is attractive enough.
SLC NAND Flash is mainly used for base stations, routers, surveillance security, wearable devices, and automotive intelligence is also driving its demand.
At present, the domestic SLC NAND Flash is mainly based on the 38nm process, and the next generation target is 24nm and 1xnm. From the perspective of supply model, domestic production is mainly Fabless (design), which requires OEM support in terms of production capacity.
Although it seems to be doing things that international manufacturers can't look up to, if you want to develop towards large-capacity MLC/TLC/QLC, you must lay a good foundation for SLC.
A new type of memory on the eve of the outbreak
It is difficult for domestic products to differentiate themselves in existing memory, and they also have to face a patent wall, so they make special efforts in the research and development and commercialization of new types of memory.
At present, there are four main types of new memory: resistance variable memory (ReRAM/RRAM), phase change memory (PCM), ferroelectric memory (FeRAM/FRAM), magnetic memory (MRAM, the second generation is STT-RAM).
The new storage technology that currently exists is compared with the flash memory technology, and the mapping丨 fruit shell hard technology
RRAM is the most promising storage technology to replace DRAM and will become an important force in breaking through the traditional von Neumann architecture, so it is also a key research direction in academia and enterprise. RRAM has high read and write speed (10ns to 30ns), high storage density, high tolerance, durability, low power consumption, can be 3D integrated, etc., can be manufactured using conventional CMOS process, flash foundry can produce with little need to change the device [38]. Domestically, in 2018, GigaDevice Innovation and Rambus corporations in the United States announced a cooperation in establishing a joint venture Hefei Reliance Memory to commercialize RRAM technology. Both Recco and Crossbar in the United States developed RRAM using SMIC's 40 nm process.
Phase change memory (PCM) originated from the Oversinsky effect proposed in the 1960s and is used to achieve data storage by using the difference in resistivity between crystals and crystals of materials. In 2015, Intel and Micron jointly proposed a new architecture of 3D X-Point memory technology (the project has been stopped, Intel continues to produce Optane persistent memory products), read and write speeds between DRAM and flash memory. Although the technical details are unknown, the advent of the 3D X-Point sparked a boom in the development of phase change memory. At present, the industrialization of phase change memory in China is at the forefront, including the Shanghai Institute of Microsystem and Information Technology of the Chinese Academy of Sciences and the relevant teams of Huazhong University of Science and Technology.
MRAM has a long history of development, but in recent years STT-MRAM based on spin moment transfer has become mainstream. MRAM can be used as an alternative to DRAM or SRAM, so that it can also save data in the event of a power failure, MRAM has obvious advantages in terms of read and write speed and durability, but the cost is higher. Everspin released a commercial STT-MRAM chip with 1GB capacity in 2018. South Korea's Samsung corporation has mass-produced embedded MRAM (eMRAM) on a production line for the 28nm FD-SOI process. The team at the Institute of Physics of the Chinese Academy of Sciences developed a magnetic moment-closed nano-ring magnetic tunnel junction as a new MRAM prototype device for the storage unit.
FRAM is a technology that is still in its embryonic state, it is a non-volatile memory prepared by using the bistable polarization characteristics of ferroelectric films, and integrated ferroelectricity, an emerging marginal discipline, has become a research direction [40].
Four types of new non-volatile memory and NAND Flash indicator comprehensive comparison chart, image source 丨 technology China
According to Yole, these new memories also have a global market share of 0.5%, and the proportion of the global market share of new memories is expected to rise to 3% in 2026.
In addition, the new non-volatile memory is also an important substrate for the upcoming explosion of the memory-computing integrated chip, and the new memory will continue to study commercialization behavior by riding this boom. (Reference can be made to the chip of storage and computing: "Chip of Memory and Computing, Potential Stock in the Era of Artificial Intelligence")
The development path of memory, image source 丨EEPW
Domestic memory chips that are valued
For domestic memory chips, the problems to be faced mainly include: First, memory chips and other chips, not only need huge financial support, but also have a long research and development cycle, it is difficult to see the yield in the short term, as if money is never spent enough; second, China's storage started late, many patents in the hands of the United States, Japan, South Korea and other countries, this is not money can be done, the need for a very long period of exploration and research; third, the industrial chain resources including wafers, EDA software, equipment are subject to people, It is also almost an oligopoly; fourth, there is a serious shortage of chip talent, especially high-end talents and leaders, which are in short supply and cannot meet the intensive research and development industry of memory chips.[41]
On the whole, in all areas of memory chips, there are only one or two domestic companies that can balance with foreign giants, and most players can only develop in the field of international giants "playing the rest", and the focus of domestic breakthrough is on new types of storage.
Experts have proposed that China, as a latecomer to the storage industry, needs to give full play to the role of enterprises under the support and guidance of the mainland in the initial stage, and suggests the establishment of a national research and development platform for semiconductor memory to support huge research and development needs. In addition, considering the cyclical fluctuations and uncertainties of the non-volatile semiconductor memory industry itself, as well as the characteristics of long-term large investment and high risk, we should pay attention to market analysis and improve the industry's regular monitoring analysis and early warning mechanism.
In the national "14th Five-Year Plan" outline, "advanced storage technology upgrade" is included in the key area of "scientific and technological frontier areas" [42], and the local government often hears the news of the construction of national memory bases and advanced storage planning, and it is expected that memory chips can gain more market share as soon as possible after being valued.
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