Smartphones run fast, in addition to the SoC mobile platform, memory and flash memory specifications are also very important, so there will be "Snapdragon 8 + LPDDR5 + UFS3.1" this kind of "iron triangle combination" said.
At present, the most advanced standard for mobile phone memory is LPDDR5X-8533, MediaTek Tianji 9000 natively supports LPDDR5X-7500, but LPDDR5X memory has not yet been commercially mass-produced, so the commercially available Tianji 9000 mobile phone is built-in or the standard LPDDR5-6400.
The early flash memory of mobile phones only supported eMMC (up to about 400MB/s) for half-duplex operation, and then upgraded to UFS that could run fully duplex, and iterated all the way to UFS2.0 (read speed 700MB/s), UFS2.1 (900MB/s), UFS2.2 (900MB/s), UFS3.0 (1700MB/s) and UFS3.1 (1900MB/s) standards.
Now, Samsung Semiconductor has announced that it has successfully developed the next generation of UFS 4.0 (Universal Flash Storage) memory chip (11mm x 13mm x 1mm, maximum capacity 1TB) and passed the certification approval of the JEDEC Solid State Storage Association, which means that smartphones will soon be able to go one step further in storage performance.
It is reported that the bandwidth speed per channel of UFS 4.0 is as high as 23.2Gbps, which is twice that of the previous generation UFS 3.1. Samsung released UFS 4.0 memory chip using its own seventh-generation V-NAND flash memory and self-developed master control, continuous read and write speeds of up to 4200MB/s and 2800MB/s, not only can the existing UFS3.1 be seconds, even if the Black Shark 5 Pro is based on the UFS3.1 flash memory also added an SSD, which constitutes a disk array system 2.0 mobile phone is not an opponent.
Black Shark 5 Pro and ordinary UFS3.1 flash phone read and write speed comparison
The most critical thing is that UFS 4.0 is a general-purpose memory chip, which can be used by anyone in the future, and it is not only faster, but also reduces the unit power consumption. It is reported that UFS 4.0 can carry a reading speed of 6MB/s per 1mA current, which is 46% higher than the previous generation, which means that users can get longer battery life.
Samsung UFS 4.0 flash memory will be put into mass production in the third quarter of this year, but Qualcomm Snapdragon 8 and MediaTek Tianji 9000 seem to support only UFS3.1 at the highest, and it is difficult to say whether they can provide native support for the next generation of flash memory. Therefore, UFS 4.0 flash memory will most likely become the standard of the next generation of Snapdragon 8 Gen2 and Tianji 9100, and LPDDR5X memory will form the "iron triangle" of 2023.