The performance advantages of silicon carbide (Sic) power devices such as high pressure resistance, high temperature resistance, low loss, and small size can meet the development needs of the new energy industry, directly hitting the two major pain points of "mileage anxiety" and "charging anxiety" of electric vehicles, and are also known as the best candidates to replace IGBTs.
STMicroelectronics China announced the official launch of its third-generation STPOWER Silicon Carbide (SiC) MOSFET transistors to advance applications in power equipment for electric vehicle powertrains and in other scenarios where high power density, energy efficiency, and reliability are important targets.
As the electric vehicle market accelerates, many OEMs and suppliers are adopting 800V drive systems to speed up charging and help reduce the weight of electric vehicles, and the new 800V system can help OEMs produce cars with longer driving ranges.
ST's next-generation SiC devices are optimized specifically for these high-end automotive applications, including electric vehicle power motor inverters, in-vehicle chargers, DC/DC converters, and electronic air conditioning compressors.
Officials said the new generation of products is also suitable for industrial applications, which can improve the energy efficiency of drive motors, renewable energy converters and energy storage systems, telecom power supplies, data center power supplies and other applications.
STmicroelectronics has now completed standard certification for the third-generation SiC technology platform, and most of the products derived from this technology platform are expected to reach commercial maturity by the end of 2021. Devices with nominal voltages of 650V and 750V to 1200V will be available, providing designers with more options for developing applications ranging from mains power to powering high-voltage batteries and chargers for electric vehicles. The first products to be marketed are the SCT040H65G3AG in 650V and the SCT160N75G3D8AG in 750V die form.
