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Downstream demand is strong, and the net profit of Dongwei Semi-Guide in 2021 increased by 430.66% year-on-year

Downstream demand is strong, and the net profit of Dongwei Semi-Guide in 2021 increased by 430.66% year-on-year

Jiwei network news, on the evening of April 21, Dongwei Semi-guide disclosed the 2021 annual report, and the company achieved revenue of 782 million yuan in the reporting period, an increase of 153.28% year-on-year; Attributable net profit was 147 million yuan, an increase of 430.66% year-on-year; Deduct non-net profit of 141 million yuan, an increase of 588.67% year-on-year; Basic earnings per share were RMB2.91. It is proposed to distribute a cash dividend of 3.3 yuan (including tax) to all shareholders for every 10 shares.

Downstream demand is strong, and the net profit of Dongwei Semi-Guide in 2021 increased by 430.66% year-on-year

Dongwei Semi-Guide said that the company's operating income in 2021 increased by 153.28% compared with the same period last year, mainly because the prosperity of the semiconductor power device field where the company is located in 2021 continues to improve, the downstream demand is strong, and at the same time, the company continues to expand production capacity by continuously deepening cooperation with upstream and downstream excellent partners, and continuously develops more excellent products and technologies.

The company's main products are widely used in new energy vehicle charging piles, communication power supplies, photovoltaic inverters, new energy vehicle vehicle chargers, data center server power supplies, fast chargers and other fields. During the reporting period, the continuous growth of the company's performance was mainly affected by the growth of demand in the above-mentioned application areas, the continuous expansion of production capacity, the continuous introduction of new products and the further optimization of the product portfolio structure.

It is reported that the gross profit margin of Dongwei Semi-guide in 2021 increased by 10.87 percentage points compared with last year.

Dongwei Semi-Guide said that with the company's excellent technical strength, product performance and first-class customer base in the field of high-performance power devices, seize the historical opportunity of domestic substitution, continue to deepen the industrial and automotive application fields represented by new energy vehicle DC charging piles, vehicle chargers, 5G base station power supplies and communication power supplies, photovoltaic inverter and energy storage, data center server power supplies and industrial lighting power supplies, etc., and maintain a stable and continuous strategic cooperative relationship with the head manufacturers in the above fields for a long time. At the same time, the company vigorously develops new power device products represented by Tri-gate IGBT, rapidly expands the proportion of new products in the company's business territory, and enters the application of high-efficiency energy conversion systems such as high-performance energy storage, photovoltaic inverters, and DC charging piles with excellent product performance, and realizes shipments in multiple key areas.

At the same time, the company's main business income has achieved steady growth in various product lines: (1) the company's high-voltage super junction MOSFET products achieved operating income of 568.5656 million yuan for the whole year, an increase of 128.27% over the same period in 2020 ;(2) the company's medium and low voltage shielding grid MOSFET products achieved operating income of 205.6947 million yuan for the whole year, an increase of 246.85% over the same period in 2020. ;(3) The company's super silicon MOSFET products achieved operating income of 2.1499 million yuan in the whole year, an increase of 432.63% ;(4) during the reporting period, the company's Tri-gate IGBT products were mass-produced for the first time, and the annual operating income was 5.6817 million yuan. In 2022, the main products of Dongwei Semi-Guide will continue to be shipped in batches and a number of new products will be added to the test certification, which will provide a sustained impetus to the sales growth of the company's main products.

With the continuous expansion of downstream demand and the negative impact of tight upstream raw material supply on the global wafer foundry industry capacity, the wafer foundry industry has generally experienced a shortage of capacity, which has further led to the growth of wafer prices. During the reporting period, the company continued to maintain stable business and technical cooperation with upstream wafer manufacturing enterprises such as Huahong Semiconductor, Yuexin Semiconductor and DB Hitek to ensure the orderly advancement of the company's new product research and development and the steady growth of supply capacity. The company continues to pay attention to and assist in the development of innovative processes suitable for wafer partners, and carries out in-depth customization and development of adapted processes and products according to the manufacturing capabilities of partners, and continues to maintain the mutual promotion and common improvement of the technical capabilities of both sides.

Dongwei Semi-Guide said that all along, the company has been deeply engaged in new energy vehicle DC charging piles, photovoltaic inverter and energy storage, new energy vehicle vehicle chargers, 5G base station power supply and communication power supply, data center server power supply and industrial lighting power supply and other fields, through the power device underlying technological innovation, developed a series of superior performance of high-voltage super junction MOSFET, medium and low voltage shielding grid MOSFET and Tri-gate IGBT products.

In 2022, the company will continue to innovate, further optimize the performance of the above power devices, and continue to expand the market share of various product families. At the same time, combined with the current urgent "double carbon" goal, seize the market opportunities related to new energy, vigorously develop high-power vehicle specification chips suitable for new energy vehicle applications, and accelerate the application of new Tri-gate IGBT in the field of new energy. The specific plans are as follows:

1. Continue to deepen the fields of new energy vehicle DC charging piles, photovoltaic inverters and energy storage, new energy vehicle on-board chargers, 5G base station power supplies and communication power supplies, data center server power supplies and industrial lighting power supplies, etc., to achieve market equalization and diversification; continue to develop more new technologies, take product performance as the first competitiveness, rapidly increase the sales of super junction MOSFETs, shielding grid MOSFETs and TBGBTs, and achieve product diversification.

2. Continue to expand the production capacity of various types of power devices, accelerate the transfer of 8-inch power device technology to 12-inch lines, expand the product specifications and series of 12-inch super junction MOSFETs, shielding gate MOSFETs and TGBTs, and expand market share.

3. Focusing on the application of new energy vehicles, we will develop more high-reliability vehicle-grade high-voltage super junction MOSFETs, medium- and low-voltage shielding grid MOSFETs and Tri-gate IGBT chips to increase market share in vehicle chargers, vehicle motors and other applications.

4. Continue to develop a new generation of super junction chips, reduce the specific on-resistance of chips, improve the current density and power density of chips, and make them more suitable for high-voltage DC charging piles, servers, photovoltaic inverters and other power systems with higher power and higher efficiency in the future.

5. Continue to develop the power device technology of a new generation of medium and low voltage shielding gate MOSFETs. Further improve the switching speed and robustness of shielded grid MOSFETs, aim at high-end areas such as data center servers, communication power supplies, and automotive applications, and increase market penetration in the above high-end application areas.

6. Actively promote the technological upgrading of 650V and 1200V TGBT, develop the second generation of TGBT while the first generation of TGBT is stable and mass-produced, and realize a large number of replacements for the mainstream fourth-generation to seventh-generation traditional IGBT technologies in the market. Based on the technical advantages of the first and second generations of TGBT, we will rapidly expand production capacity, increase the sales and sales ratio of the company's IGBT products, optimize the company's product portfolio structure, and further diversify the company's products.

7. Increase the research and development of wide bandgap semiconductor power devices and super silicon power devices, form a series of wide bandgap semiconductor power device products, so that wide bandgap semiconductor power device products and silicon-based super silicon devices complement each other and achieve stronger market competitiveness. (Proofreader/Li Zhengcao)

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