Samsung will launch 224-layer flash memory: 30% faster

According to the news of the core research institute on February 9, according to the news, Samsung's fastest energy production at the end of this year is 224 layers of flash memory, and the performance is increased by 30%. Samsung's 3D flash V-NAND is currently developed to the seventh generation, up to 176 layers, originally planned to be mass production at the end of last year, but because of factors such as the decline in NAND flash price, Samsung chose to postpone mass production, and it will be officially mass-produced in the Q1 quarter of this year, resulting in a slight technical lag behind Companies such as Micron.

Edited by the Institute of Core Research

However, Samsung is expected to catch up on the next generation of flash memory, as soon as the end of this year and the beginning of next year to launch the eighth generation of V-NAND flash memory, the number of stack layers for the first time exceeded 200 layers, before the rumor was 228 layers, now it is said to be 224 layers, equivalent to stacking 96 layers on the basis of 128 layers.

According to the news, Samsung's 224-layer flash memory performance is also very good, the data speed has increased by 30%, and the production efficiency has also increased by 30%. Samsung's 224-layer flash memory technology is also very difficult, before Samsung was the only company to use single-stack technology to achieve 128 layers of flash memory, this time the 224 layer uses dual-stack technology, the technical challenge is very serious.

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