At last month's ITF conference, the blueprint released by imec (Belgian Microelectronics Research Center) showed that after 2025, transistors entered the Emi scale (, angstrom, 1 Angstrom, 1 Angstrom = 0.1 nanometers), of which 2025 corresponds to A14 (14 = 1.4 nanometers), A10 (10 = 1 nm) in 2027, and A7 (7 = 0.7 nm) in 2029.
At last month's ITF conference, the blueprint released by IMEC (Belgium's Microelectronics Research Center) showed that after 2025 transistors enter the Emi scale (, angstrom, 1 Angstrom, 1 Angstrom = 0.1 nanometers), of which 2025 corresponds to A14 (14 = 1.4 nanometers), A10 (10 = 1 nm) in 2027, and A7 (7 = 0.7 nm) in 2029.
At that time, imec said that in addition to the new transistor structure and 2D materials, there is also a key link is the High NA (High Value Aperture) EUV lithography machine. It revealed that the next generation of EUV lithography machine 0.55NA No. 1 trial machine (EXE: 5000) will be provided to IMEC by ASML in 2023 and mass production in 2026.
However, in its conversations with the media this month, ASML seemed to imply that this progress was ahead of schedule. The first high-NA EUV lithography machine will be opened for early access in 2023, open to customers for R&D from 2024 to 2025 and mass production will begin in 2025.
It is reported that compared with the current 0.33NA EUV lithography machine, 0.55NA has a revolutionary advance, which can allow etching of higher resolution patterns.
Analyst Alan Priestley said that the price of a 0.55NA lithography machine will be as high as $300 million (about 1.9 billion), which is twice the current 0.33NA.
As early as July this year, Intel expressed its commitment to becoming the first customer of the high-NA lithography machine, and Maurits Tichelman, Intel's vice president of marketing, reiterated this statement and regarded the high-NA EUV lithography machine as a major technological breakthrough.
Source: Fast Technology