1 Exposure to UMC has won another large order for Samsung's 28nm OLED driver IC, and the OEM price has exceeded that of TSMC
According to Taiwan media reports, following the handover of Samsung's 28nm ISP to UMC last year, UMC recently won a large order for Samsung's 28nmOLED driver IC, with a monthly production capacity of more than 10,000 pieces.
It is understood that limited by their own production capacity is insufficient, Samsung Electronics' LSI division last year will be ISP handed over to UMC OEM, making UMC 28nm process more sought-after, production capacity supply is in short supply to frequent price increases, users pointed out that UMC 28nm foundry price has been raised to more than TSMC.
According to the industry, UMC has recently obtained a large order for Samsung's 28nm OLED driver IC, plus Samsung's purchase from Taiwan factories is also put into production at UMC, with a total monthly production capacity of more than 10,000 pieces, and the operation of UMC in the second half of the year can be expected.
Although General Manager Wang Shi responded to the legal person that 28nm production capacity is likely to be oversupplied in 2023, he also believes that 28nm is already a sweet process node for application, and the demand will continue, and UMC has signed long-term contracts (LTA) with many customers, and the long-term contract will cover nearly 80% of the production capacity of UMC 28nm, even if the market conditions change in 2023, the impact on U-Power is relatively small. The industry pointed out that Samsung is also one of UMC's long-term customers, but UMC does not respond to customer-related order questions.
2 Opening red | 6-inch indium phosphide R & D breakthrough, the group's semiconductor strength greatly increased!
Pilot occupies an important position in the global indium phosphide industry chain
2-6 inch indium phosphide substrate size comparison
As one of the very few high-tech enterprises in China that has mastered the production technology of indium phosphide single crystal, the next step will be to extend the length of the growth single crystal rod according to the performance of the equipment and the market demand, and continue to improve the production capacity of the product. At the same time, the company has carried out sample delivery work and adjusted the product performance according to customer needs, product quality is recognized by customers, and the group will continue to expand the market of indium phosphide substrate at home and abroad in the future, driving the group's semiconductor business to achieve a new round of rapid growth.
As one of the important iii.-V. compound semiconductor materials, indium phosphide (InP) is a new generation of electronic functional materials after Si (silicon), Ge (germanium), and GaAs (gallium arsenide). Indium phosphide has many advantages: high electro-optical conversion and electron mobility, good thermal conductivity, strong radiation resistance and so on. These characteristics determine its wide application in many fields such as radio frequency, optoelectronics, mobile communication, and data communication. At present, our company has mastered the domestic leading and international advanced level of VGF (vertical temperature gradient solidification method) indium phosphide single crystal growth method. The advantages of this method are small temperature gradient, stable growth interface, low crystal dislocation, and excellent performance, which ensures the high yield and quality stability of the 6-inch indium phosphide wafer produced.
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