Nanomicro Semiconductor established the world's first gallium nitride power chip design center for electric vehicles

Recently, the official website of NanoMicro Semiconductor announced the opening of a new electric vehicle (EV) design center to further expand into the higher-power gallium nitride market.

Gallium Nitride-based on-board chargers (OBCs) are estimated to charge up to 3x faster and save up to 70% more energy than traditional silicon solutions. It is estimated that gallium nitride OBC, DC-DC converters and traction inverters are expected to extend the range of electric vehicles or reduce battery costs by 5%, compared with the original use of silicon chips, gallium nitride power chips are expected to accelerate the global EV adoption three years earlier. It is estimated that by 2050, the road sector is expected to reduce CO2 emissions by 20% per year after upgrading electric vehicles to GaN, which is also the reduction target of the Paris Agreement.

According to reports, the new design center is located in Shanghai, China, with an experienced team of world-class power system designers with comprehensive capabilities in electrical, thermal and mechanical design, software development, and complete simulation and prototyping capabilities. The new team will support EV customers around the world, from concept to prototype to full certification and mass production.

Nanomicro semiconductor said that the high-power 650V GaN IC tailored for EV applications has been providing samples to EV customers in December 2021. At the recent Xiaomi Production and Investment Day event, Nano Micro showed the 6.6kW OBC concept model, which was also presented at CES. (Proofreading/Andrew)