Charging head network learned that the recent Zhuhai Gallium Future Technology in response to the Requirements of China's national standard mandatory regulation GB 20943 and the European Electrotechnical Standardization Committee IEC 61000-3-2 requirements, using the self-developed G1N65R150TA and G1N65R050TB two low dynamic internal resistance Cascode Gallium Nitride devices, with the Genesis Electronics IVCC1102 chip, took the lead in realizing the 700W intelligent mixed signal bridgeless totem pole PFC + LLC mass production power solution. Its full load efficiency is up to 96.72%, in line with 80PLUS titanium energy efficiency.
Gallium nitride is used for totem pole PFC
As an almost perfect high-power factor circuit, the designer uses four MOSFETs to integrate the functions of rectification and PFC, reducing the number of components and improving the efficiency of the rectification process. However, there is a parasitic triode in the traditional Super Junction MOSFET tube, and when the DV/DT is too high, it is easy to conduct the parasitic triode, causing avalanche breakdown.
At the same time, the Super Junction MOSFET has the problem of pass-through current and loss caused by the reverse recovery of the body diode, so when the main pipe is quickly turned on at a large current, the transient current caused by the reverse recovery charge Qrr of the sub-tube can directly burn out the MOS. In order to solve this problem, you can only use a discontinuous CRM mode, so that the current is reduced to 0 and then turned on, the cost is that the average current and power are only half of the original.
And GaNext GaN can perfectly solve the above problems. GaN conduction principle is a two-dimensional electronic gas conduction formed by the piezoelectric effect between gallium nitride and aluminum gallium nitrogen two layers, not only no body diode and parasitic transistor, no DV/DT failure mode, and other superior properties. As you can see in the table above, gallium nitride has one-fifth of its Qg and output capacitance compared to Super Junction MOSFETs.
GaN's Qrr is one in 200th the Super Junction MOSFET! Even compared to the Super Junction MOSFET dedicated to fast recovery, Qrr performance is more than 10 times better. This means that the GaN allows the totem pole PFC to operate in continuous current mode to improve efficiency while maintaining high power density, achieving near-ideal conversion efficiency.
Zhuhai Gallium Future Technology adopts gaN device bridgeless totem pole PFC scheme, which is designed to remove the Vf loss inherent in the input rectifier bridge, and solves the problem that the efficiency of traditional FPC lines cannot be improved. At the same time, through the application of Cascode GaN, the problem of totem pole PFC MOSFET reverse recovery charge Qrr is too high can only be solved by CRM working mode. With Cascode GaN devices with very low equivalent Qrr, PFC can operate in continuous current mode to improve efficiency without sacrificing power density, achieving conversion efficiencies of up to 99.1%.
Gallium future 700W GaN power supply key parameters
Gallium future this set of 700W GaN power supply scheme power density up to 14.7W/in, suitable for working in 0-40 °C temperature environment, support 90-264V ~ 50/60Hz global wide range voltage input, can be 40V-56V voltage regulation output, maximum constant current 13A, maximum output power 700W. Full load efficiency ≥ 96.72% and output voltage ripple <300mV.
In addition, the power supply adopts a three-pin socket, which is grounded to avoid user contacts and improve the user experience; the three-dimensional size (with plastic shell) is only 260mm X 75mm X 40mm, the surface temperature rise is less than 50 °C, in line with IEC 62368-1 standard, THE EMI standard is in line with EN55032 CE & RE Class B, support TSD, OLP, OVP, OCP, SCP, Open Loop and other protection.
The efficiency of the gallium future 700W GaN power supply machine is relatively high compared with the ordinary SI MOS products on the market, and the conversion efficiency is increased by nearly 2% under the half-load test, and the conversion efficiency is increased by nearly 1.3% under full load. Energy savings increased by 38.72%, which is expected to save 80-120 kWh of electricity per year per single-power device.
The above is a diagram of gallium future 700W GaN power supply circuit topology for your reference.
Temperature rise test
The above figure shows the thermal imaging diagram of gallium future 700W GaN power supply scheme running continuously for 1 hour at 25°C ambient temperature at 25°C ambient temperature without heat sink. It can be seen that it benefits from GaNext's excellent GaN device performance and mature reliability design scheme. The maximum measured temperature on the front of the 700W GaN LED driver power supply bare board is only 88.8°C.
Gallium future GaN device advantages
Zhuhai Gallium Future Technology G1N65R150TA and G1N65R050TB, compatible with SuperJunction drive, dynamic internal resistance at 25 °C ambient temperature does not exceed 150 momm and 50 momm, providing TO-220, TO-247 plug-in packages. With its strong anti-interference ability and simple drive mode, it helps users achieve a simple and efficient 150W-1500W power supply scheme.
Lower dynamic resistance for improved conversion efficiency
In high-voltage applications, although gallium nitride devices can greatly reduce switching losses, there is often a feature that is unfavorable to conduction losses, called dynamic internal resistance. For a short period of time after changing from the high-voltage blocking state to the on-state, the gallium nitride device cannot immediately work to the internal resistance state (static internal resistance) that is conducted for a long time, and the resistance value at this time is higher than the static internal resistance.
The dynamic internal resistance ratio of ordinary enhanced Gallium nitride devices on the market is about 30% higher than static, especially at 150°C junction temperature, the dynamic internal resistance is often as high as 250% of the static internal resistance at 25°C junction temperature. G1N65R150TA and G1N65R050TB adopt a special process, the dynamic internal resistance is reduced, the dynamic internal resistance at 25 °C junction temperature is the nominal value of 150 mohm and 50 mohm, and the junction temperature at 150 °C is only 1.5 times that of the junction temperature of 25 °C, which effectively reduces the conduction loss and meets the harsh heat dissipation requirements of the 150W-3600W power supply.
Higher gate withstand voltage for a wide range of controller solutions
Unlike ordinary enhanced GaN power devices with gate withstand voltages of no more than 7.5V, the gates of all Gallium nitride products in the future can withstand limit voltages up to 20V, which is compatible with controllers used to drive superjunction devices. These controllers typically drive voltages of 12V, and if used to drive common enhanced Gallium nitride devices, an additional divider capacitance network and clamped Zener diodes are required to drive up to eight devices on the line. The use of gallium future gallium nitride device, the drive line only needs a resistor and a bead, or 3 resistors and a diode, the same as the traditional silicon superjunction device, the simple peripheral circuit effectively reduces the occupied PCB area, especially suitable for small size fast charge design.
Higher threshold voltage to avoid misleading on
The threshold voltage of ordinary enhanced gallium nitride is usually 1.5V, which is less noise interference than silicon superjunction devices (typical values are generally around 3V), increasing the risk of misleading passing. Therefore, product packaging and layout are relatively cumbersome to handle, and the influence of source parasitic inductance needs to be minimized as much as possible. The G1N65R150TA and G1N65R050TB increase the on-threshold voltage to 3.5V, which can effectively reduce the risk of misleading on due to gate noise and make power product design easier.
summary
Zhuhai Gallium Future Technology is a leading manufacturer of gallium nitride power devices in China, is committed to the research and development and production of high-performance cascaded structure gallium nitride products, using special integrated technology combined with the ease of use of silicon devices and the high frequency and high efficiency characteristics of gallium nitride devices, to achieve high power density power supply solutions from 10 watts to 100 00 watts.
It is reported that gallium future G1N65R150TA and G1N65R050TB have been officially mass production, based on the two devices developed 700W gallium nitride intelligent mixed signal bridgeless totem pole PFC + LLC power mass production scheme, can achieve 80PLUS titanium energy efficiency, full load conversion efficiency up to 96.72%.
Partners in need can contact Gallium Future Technology for more product details.