In the 3nm node, Samsung in order to compete with TSMC, aggressively chose the next generation of GAA transistor technology, TSMC is more secure, the first generation of 3nm process is still using The FinFET process, the advantage is that it can be mass-produced in the second half of this year.
At today's earnings report, TSMC also explained the progress of their 3nm process, emphasizing that the 3nm process is developing smoothly and is mass production in the second half of the year as planned.
TSMC stressed that 3nm continues to use FinFET transistors in a comprehensive way that can provide customers with the most mature technology, the best performance and the best cost.
According to the official data of TSMC, TSMC's 3nm is 1.7 times higher in logic density and 11% in performance than the previous generation's 5nm process, and the power consumption can be reduced by 25-30% under the same performance.
In addition, TSMC also revealed an enhanced version of the 3nm process N3E, saying that it will mass-produce a year after the mass production of the 3nm process, that is, launched in 2023, which will bring stronger performance.
However, TSMC's technical details of N3E are still confidential, and there is no leakage of whether it will upgrade the transistor architecture.
![In the post-FinFET era, they will take on the heavy responsibility[fig]](data:image/gif;base64,R0lGODlhAQABAIAAAP///wAAACwAAAAAAQABAAACAkQBADs=)