Great Wall Motor: Officially entered the core industry of third-generation semiconductors

On December 29, Great Wall Motor signed a strategic investment agreement with Hebei Tongguang Semiconductor Co., Ltd. (hereinafter referred to as "Tongguang"), a leading third-generation semiconductor company in the industry, to officially enter the core industry of third-generation semiconductors.

This time, Great Wall Motors, as the leading investor, will promote the development of the latter's silicon carbide industry, focus on the application of the third generation of wide bandgap semiconductor silicon carbide in the new energy automobile industry, and promote the industrialization of silicon carbide semiconductor materials and chips.

Great Wall Motor said that the investment in Tongguang Shares, in-depth layout of the core areas of the third generation of semiconductors, in line with Great Wall Motors' strategic development plan in the field of new energy, but also help the industry to break through barriers.

After Great Wall Motors invests in Tongguang Shares, the cooperation between the two sides will continue to deepen, promote the accumulation of technology in the field of third-generation semiconductors, promote the vertical layout of the semiconductor industry chain, and accelerate the pace of research and development and expansion of Tongguang Shares, strengthen the strength of enterprises, obtain more opportunities, form a more concentrated development pattern and a more perfect industrial chain, and provide important support for the development of the new energy automobile industry.

According to the data, Hebei Tongguang Semiconductor Co., Ltd. was established in 2012, in the third generation of semiconductor core technology field has industry-leading technology accumulation, relying on the Institute of Semiconductors of the Chinese Academy of Sciences, specializing in the research and development, preparation and sales of silicon carbide single crystal, is the largest in Hebei Province, is also the first in China to achieve mass production of the third generation of semiconductor material silicon carbide single crystal substrate of high-tech enterprises.

In September this year, Tongguang's first expansion project, Laiyuan Factory, has been put into operation. In the future, Tongguang co., Ltd. also plans to build 2,000 silicon carbide crystal growth furnace growth bases and processing bases, and the annual production capacity of silicon carbide single crystal substrates will reach 600,000 pieces.