Packaging gallium nitride devices and controllers has become the preferred choice for power chip manufacturers. Integrating the device into a package in a closed package meets the goal of high chip integration and reduces the interference of parasitic parameters on the high-frequency switch of gallium nitride, while simplifying the design of the charger, reducing the number of peripheral devices, and accelerating the production of the charger.
Biyiwei has introduced two gallium nitride sealing chips KP22064 and KP22066 using flyback topology, with extremely low standby power consumption. The highly integrated, packed chip can reduce the number of charger peripherals and enable high efficiency, small volume switching power supply design.
KP22064 and KP22066 both have built-in 650V Gallium nitride switch tube, of which the two devices have different built-in gallium nitride switch tube conductance, support power is also different, KP22064 built-in 365mΩ gallium nitride switch tube, support 30-45W output power. The KP22066 has a built-in 165mΩ Gallium nitride switch tube and supports 45-100W output power.
KP2206X series integrated gaN switch tube, integrated high voltage start, integrated X capacitor discharge and input overvoltage, undervoltage protection function, with <30mW of very low standby power consumption, using valley lock mode to reduce switching losses. The KP2206X has three operating frequencies that can be pin-configured, supports 140kHz, 300kHz, 500kHz, supports 9-112V supply voltage, and is suitable for wide voltage output applications.
KP2206X built-in peak current jitter function to optimize EMI, support green mode and hiccup mode operation, integrated power supply undervoltage, overvoltage protection, integrated input undervoltage, overvoltage protection, integrated output overvoltage protection, cycle-by-cycle current limiting, overload protection, overcurrent protection, overtemperature protection, current sampling resistor open circuit protection and other protective measures.
It is worth mentioning that the KP2206X combination chip also supports dual windings to power the chip, with two power supply pins, which can switch the power supply winding tap according to the output voltage. When the output voltage range is wide and the output voltage is high, the chip can automatically switch to a low-voltage winding power supply to reduce chip losses. Using Biyiwei's proprietary DFN8*8 package, the power trace and control trace are separated, and a large-area heat dissipation PAD is adopted, which effectively reduces the temperature rise and has excellent heat dissipation performance.
The figure shows the application circuit diagram of the Biyi micro KP2206X gallium nitride sealing chip, which supports dual winding power supply and supports a wide output voltage range.
Charging head net summary
By encapsulating the gallium nitride device inside the chip, it becomes a closed seal, significantly simplifying the primary circuit of the charger. The Gallium Nitride switch and controller are packaged inside a single package, eliminating the need for PCB traces, greatly reducing the drive loop, reducing the impact of parasitic parameters on high-frequency switches, simplifying design and improving efficiency.
The two gallium nitride sealing devices launched by Biyiwei are both packaged in a heat-enhanced DFN8*8 package, which effectively reduces thermal resistance and improves thermal performance. The chip supports three operating frequencies to meet the design of different power densities. Dual-winding power supply enables the chip to support a wider output voltage range, meeting the needs of USB PD fast charging high efficiency, small size, and low standby power consumption.