IT home January 28 news, according to BOE announced that it has made important breakthroughs in the field of oxide semiconductor display technology, overcome copper (Cu) easy diffusion, easy oxidation and easy drilling and other industry problems, in the industry to take the lead in the realization of copper interconnect stacking structure mass production, and high refresh rate, high resolution, low power oxide display technology integration, breaking the foreign monopoly, in the industry continue to launch low power consumption, ultra-narrow edge, 500Hz + e-sports display, super size 8K Oxide 120Hz, A range of high-end technologies and products such as variable frequency refresh rate displays. At the same time, there is also a great breakthrough in the research and development of high mobility 30+cm2/Vs oxide technology, which lays a technical foundation for the performance improvement of subsequent high-end products.
▲ BOE 13.3-inch oxide Full In Cell UHD ultra-narrow bezel display
Oxide semiconductor display technology has the advantages of high mobility, low off-state current, simple process process, and large size, which can meet the dual needs of future product quality improvement and energy consumption reduction. However, in the industrialization application of oxide technology, the instability problems of the traditional oxide film microstructure under bias stress, illumination, and device performance attenuation under large current, as well as the matching problem between copper process and oxide process, are common problems that need to be solved by the semiconductor display industry.
BOE developed copper diffusion barrier technology, put forward a unique nitrogen and oxygen balance theory, interface repair theory, and at the same time, the combination of production, education and research has achieved breakthroughs in materials, device structure and principle, solved the mass production problem of oxide semiconductor display technology, and took the lead in achieving mass production in China. At the same time, the integrated gate drive circuit is embedded in the array substrate, the integrated technology of touch drive, and the optical model of the thin film with high transmittance not only realize the product performance improvement, but also realize the technical upgrade from the traditional amorphous silicon TFT to the oxide conductor display.
The breakthrough of BOE's new oxide semiconductor display technology is mainly reflected in four aspects:
01 Materials and devices
By designing a unique new stacking structure of copper interconnected laminated wiring oxides, BOE has overcome industry problems such as Easy Diffusion, Easy Oxidation and Easy Drilling. It has mastered the cu buffer layer technology with independent high-volume production, and has taken the lead in the industry to achieve mass production of oxides of copper interconnect stacked structures, and has achieved large-scale mass production in six mass production lines such as HEFEI, Chongqing, Nanjing and Chengdu in BOE.
02 Theory of Originality
BOE took the lead in proposing nitrogen and oxygen balance theory and interface repair theory, which realized the controllable oxide characteristics and yield. Through the nitrogen oxygen defect (DNO) control in the oxide device and the active layer interface etch repair technology, the Vth negative bias problem caused by the channel interface oxygen vacancy (Vo) defect and doping defect was solved, and the incidence of bright spot defect was greatly reduced.
03 Display performance
BOE proposed an integrated model of the gate drive circuit, using the DC denoising mode for the first time, reducing power consumption by 15%, improving reliability by 400%, and introducing an overall reset signal to solve the problem of GOA end-line failure. The TFT thermal design was first proposed and applied in a production product, and the GOA life was more than doubled, enabling full-size oxide product coverage.
04 Functional integration
Designed high-permeability stacking model and high-permeability dynamic compensation column spacer scheme, developed source drive signal multiplexing technology (MUX), oxide full In Cell technology and intelligent synchronous drive (Smart Sync Driving) charging compensation scheme, realized the integration of high refresh rate, high resolution oxide display technology, and took the lead in the industry to achieve 110-inch 8K 120Hz oxide GOA mass production.
▲ BOE 110-inch Oxide 8K 120Hz display
BOE's distribution in the form of mass-produced products in semiconductor oxide display technology, from mobile phone products to oversized 110-inch TV products, from 10 Hz low-frequency driver products to 500Hz+ high-frequency driver products, from non-touch screens to full In Cell touch screen technology with higher integration, basically achieve full coverage of mainstream market products.
▲ BOE 27-inch oxide FHD 500Hz + display