Today's 3D flash memory in the industry to play a building game, last year's magnesium 176-layer stack flash shook Samsung's leading position, however, Samsung intends to chase back this year, it will launch the eighth generation of V-NAND flash memory at the end of this year and early next year, the number of stack layers exceeded 200 layers for the first time, the previous rumor was 228 layers, and now it is said that it is 224 layers, which is equivalent to stacking 96 layers on the basis of 128 layers.
It is reported that Samsung's 224-layer flash memory performance is very good, the data speed has increased by 30%, and the production efficiency has also increased by 30%.
In addition, Samsung's 224-layer flash memory technology is also very difficult, before Samsung was the only company to use single-stack technology to achieve 128 layers of flash memory, this time the 224 layer uses dual-stack technology, the technical challenge is very serious.
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