Preface
From February 25 to 29, 2024, the International Power Electronics Application Exhibition (APEC) will be held in Los Angeles, USA, co-sponsored by the IEEE-Industrial Applications Society (IAS), the Power Electronics Society (PELS), and the American Power Manufacturers Association (PSMA).
Innoscience is a leading global 8-inch GaN IDM company that aims to create a low-carbon, energy-efficient energy ecosystem based on high-performance GaN-on-Si. At the International Exhibition on Power Electronics Applications (APEC), Innoscience brought a full range of new products and advanced application solutions with the theme of "Fill the World with GaN", demonstrating the charm of GaN in multiple scenarios.
Among them, for low-voltage gallium nitride, Innoscience has launched several new applications, and the charging head network will take you to understand.
Innoscience's new application solution for low-pressure GaN
BMS 方案搭载100V VGaN
For BMS applications, Innoscience has developed a 16S/120A BMS evaluation board with 100V dual-conduction VGaN (INV100FQ030A) to achieve charge and discharge control and protection. Compared with the Si solution, the PCB occupies more than 40% of the board area and cost. Thanks to the device performance of VGaN, this solution not only achieves the advantages of small size (65mm*180mm) and low system cost, but also achieves the best heat dissipation performance.
Among them, the INV100FQ030A is a 100V dual-conducting device, which can be used for efficient applications in battery management systems, high-sideload switching in bidirectional converters, switching circuits in power supply systems, and other fields.
"One VGaN can replace two back-to-back Si MOSFETs with a common drain connection, enabling bidirectional switching of battery charging and discharging, further reducing on-resistance and losses," said Shawn, Innoscience's Product Division. The VGaN device uses a single-gate design to control the logic from Gate to Drain1/Drain2 to enable charge-protected dischargeable and discharge-protected chargeable, while significantly reducing the number of devices, shrinking the board area, and reducing overall system cost. ”
The INV100FQ030A is available in a compatible pin design and is available in an FCQFN 4x6mm package, allowing customers to select specifications based on their application needs.
In order to facilitate customer verification and implementation, Innoscience synchronously provides BMS system solutions, and the design scheme covers low-side same-port, high-side same-port, high-side split-port, etc. INV100FQ030A has significant advantages in battery management systems (BMS) and has huge market potential.
1kW DCDC电源模块搭载100V SolidGaN
To meet the high power density demands of data centers, the 1kW 48V-12V solution uses GaN on both the primary side (100V devices) and the secondary side (40V devices), while 100V is used to maximize power density and simplify the circuitry The device uses Innoscience's latest integrated SolidGaN (ISG3201) and the industry-leading magnetic integrated matrix transformer design to increase the switching frequency to 1MHz, with an overall solution volume of only 39mmx26mmx7.5mm and a peak efficiency of 98.5%.
The 1000W DCDC power module is designed with two InnoGaN GaN chips, one for the ISG3201 and the other for the INN040LA015A, which can realize the high power conversion of the system.
SolidGaN ISG3201 is a 100V half-bridge GaN encapsulated chip, which integrates two 100V/3.2mΩ enhanced GaN and one 100V half-bridge driver, through the internal integrated driver, optimizes the drive loop and power loop, significantly reduces parasitic inductance and switching spikes, and further improves the overall performance and reliability of the 1000W 48V power module system. The product area (5mmx6.5mm) is only slightly larger than a single standard 5x6 Si device, and the PCB footprint is reduced by 73% compared to the Si solution. For resonant soft-switching applications, GaN's soft-switching FOM is only 45% of Si's, which means that 100V GaN is superior in high-frequency soft-switching applications.
At the same time, the chip also has independent high-side and low-side PWM signal inputs, and supports TTL level drive, which can be driven and controlled by a dedicated controller or general-purpose MCU, making it the best choice for 48V power systems such as data center module power supplies, motor drives, and Class D power amplifiers.
INN040FQ015A is a 40V resistive 1.5mΩ enhanced GaN transistor in an FCLGA 5*4 package, with a very low gate charge and on-resistance, and zero reverse recovery charge, which can not only reduce the board area, but also support the high power density design of 1000W DCDC modules, and the higher switching frequency can also provide higher dynamic response for the system, empowering green data centers.
Summary of the charging head network
At the 2024 International Exhibition on Power Electronics Applications (APEC), Innoscience showcased its energy ecosystem based on high-performance GaN-on-Si, including 16S/120A BMS evaluation boards for battery management systems, and 1000W DCDC power modules for high power density requirements in data centers. These solutions and products demonstrate the advantages of GaN technology in terms of size, cost, and performance by reducing PCB footprint, reducing costs, and improving heat dissipation and efficiency, and are suitable for applications such as battery management, bidirectional converters, and data center module power supplies.