Preface
In the process of expanding the GaN fast charging market, the level of power supply technology is also constantly improving, and the initial GaN fast charging source generally needs to be designed with a combination of controller + driver + GaN power device, which not only has a complex circuit layout, is relatively difficult to develop, but also has a relatively high cost.
In order to achieve higher power density and reduce the number of peripheral components, many power chip manufacturers have begun to deploy a more integrated packaged gallium nitride chip product line. These chips can integrate GaN power devices, PWM control, drive, protection and other functions on a single chip, which can realize the functions of the original chips, which can not only improve the performance of the overall solution, but also help reduce the footprint of the PCB board, reduce the product size, and cut the cost of materials. In addition, they effectively reduce the parasitic parameters of the fast charging scheme at high frequencies, reduce ringing, and thus reduce switching losses. These chips are also less susceptible to primary current interference, improving system reliability and switching speed. Power engineers can complete commissioning work more easily and quickly during the application process, thereby accelerating the product development cycle.
Encapsulated GaN chips are used in a wide range of applications, including electronic devices, communication equipment, electric vehicle chargers, industrial power supplies, and renewable energy systems. Not only do these chips provide efficient power conversion, but they often include a variety of protection features to ensure the safety and reliability of the power system.
Lik Sang Mei sealed gallium nitride chips
The charging head network summarizes a number of packaged gallium nitride chips launched by Lishengmei, with a power range of 25W-45W, and summarizes them into the following table, which details the specific models and related characteristics of these chips.
Lisheng Mei LN9T28xF
The LN9T28xF is a series of high-density, high-performance GaN chips with built-in 700V GaN power devices operating at 130kHz (65kHz versions also available) for 45W and 30W GaN fast charger designs, enabling power manufacturers to easily build low-standby, low-cost, high-performance solutions for CoC V5 and DoE VI efficiency in their applications.
The PWM switching frequency of the LN9T28xF chip is set internally by the chip, with full temperature compensation, and the maximum value is set to 130kHz. Under no-load or light-load conditions, the integrated circuit can operate in intelligent interrupt mode to reduce switching losses, resulting in good conversion efficiency while having low standby power consumption. The LN9T28xF chip adopts quasi-resonant operation mode, valley switch to improve efficiency, no-load power consumption as low as 50mW, built-in soft-start control circuit on the chip, extended light-load control to optimize energy efficiency and standby power consumption, and no audio noise at all loads.
The low VDD start-up and operating currents make the LN9T28xF very reliable and long-lasting. The circuit can be started with a resistor with a larger resistance, which also reduces the loss of the starting resistor and further reduces the standby power consumption of the system. The LN9T28xF also offers a very comprehensive range of auto-recovery protection circuitry, including cycle-by-cycle current limit (0CP), output overload protection (OLP) with high and low voltage compensation, VDD overvoltage clamping, and undervoltage lockout (UVLO).
The LN9T28xF chip is packaged in ESOP8, which is suitable for power adapters, fast charging adapters, open frame power supplies and other fields.
Lik Sang Mei LIC3515F
LIC3515F is a new generation of high-performance, highly integrated current-mode PSR power switching ICs. It can easily achieve low standby power consumption as low as 30mW or less, with high efficiency conversion and low power consumption to meet the efficiency standards of CoC V5 and DoE LEVEL VI, and is suitable for applications with peak power up to 40W.
The chip provides a high-performance PSR master control CC/CV switching power supply solution, built-in high-precision constant current and constant voltage control, and adopts optimized valley switching technology, which can provide no less than ±3% output current accuracy and ±2% output voltage accuracy error in the full range.
Lik Sang Mei LIC3513D
LIC3513D is a new generation of high-performance, highly integrated current-mode PSR power switching ICs. It easily achieves low standby power consumption as low as 30mW or less, with high-efficiency conversion and low-power consumption to meet the efficiency standards of CoC V5 and DoE LEVEL VI for applications with peak power up to 30W.
The chip provides a high-performance PSR main control CC/CV switching power supply solution, built-in high-precision constant current and constant voltage control, and adopts optimized valley switching technology, with an output current accuracy error of better than ±3% and an output voltage accuracy error of better than ±2% in the full range.
Lik Sang Mei LIC3511B
LIC3511B is a new generation of high-performance, highly integrated current-mode PSR power switching ICs. It easily achieves low standby power consumption as low as 30mW or less, with high efficiency conversion and low power consumption, meeting the efficiency standards of CoC V5 and DoE LEVEL VI, and is suitable for applications with peak power up to 25W.
LIC3511B is a high-performance PSR master CC/CV switching power supply solution, with built-in high-precision constant current and constant voltage control, using optimized valley switching technology, providing better than ±3% output current accuracy and ±2% output voltage accuracy error in the full range.
Summary of the charging head network
The maturity of the third-generation semiconductor gallium nitride technology has given birth to the large-scale popularization of high-density power supplies. With the advantage of rapid iteration, consumer power products have taken the lead in realizing the large-scale commercial use of gallium nitride technology and have been unanimously recognized by the market. For low-power, high-density electric fast charging sources, the encapsulated gallium nitride chips derived in recent years are undoubtedly an ideal choice, which can not only reduce the PCB board area, but also help reduce costs.
PTM has been deeply engaged in the field of power management chips for more than ten years, and has a variety of power chip solution product lines such as USB PD fast charging source, mobile phone charger, battery charger, switching power adapter, home appliance power supply, smart home power supply, IoT system power supply, power tool power supply, etc. The encapsulated gallium nitride chip series launched for 25W-45W power supply is an expansion and improvement of the existing product line on the one hand, and also reflects the ability of Lishengmei Semiconductor to keep up with the pace of the times and actively lay out the third-generation semiconductor product line.