The product received the review is XPG Longyao D45G RGB DDR4-3600 16GB x 2, with a 2mm aluminum metal radiator, full-frame 120 ° ultra-wide angle light bar as a selling point, adding a twill die-casting design to greatly improve the overall texture, using double-sided Samsung BCWE B-Die granules, preemptive entry to the performance level player market.
Weigang introduces the new XPG Longyao D45G RGB DDR4 memory, with a 2mm aluminum metal heat sink, full-frame 120° ultra-wide angle light bar as the selling point, and the addition of twill die-casting design to greatly enhance the overall texture, with DDR4-3600 / 4133 / 4400 speed, 8GB, 16GB and 32GB single strips to choose from.
Received two XPG Longyao D45G DDR4 RGB D4-3600 16GB C18 memory set sent by Weigang, using a red color box that is very eye-catching under the light, the upper left display supports ASUS, ASRock, Gigabyte and MSI Lighting effect synchronization, the central strip Longyao D45G RGB memory body, the lower right shows the memory capacity and speed.
XPG Longyao D45G RGB design is very metallic, 2mm black aluminum alloy hot sheet with die-cast twill pit pattern, the top of the heavy light bar to bring a full-width 120° ultra-wide angle glow, very good-looking.
The top of the memory module has been added to the full-frame 120° ultra-wide angle light bar, built-in 10, 5 channels of ultra-bright RGB LED particles, bringing soft and symmetrical ARGB dazzling effect, supporting the lighting effect control technology of the four major board factories, and can synchronize with the motherboard factory.
DDR4-3600 CL18-22-22 @ 1.35V
The D45G RGB D4-3600 16GB x 2 received the evaluation is AX4U360016G18I-CBKD45G, the specification is DDR4-3600 CL18-22-22-44 2T, and the operating voltage is 1.35V.
Samsung B-Die granules are used
After removing the heat sink, you can see that the Weigang Longyao D45G RGB D4-3600 memory adopts the JEDEC 8 Layers B2 PCB trace design, and the PCB has a total of 16 Samsung memory particles on both sides, and the model is K4A8G045WC-BCWE.
The number of Samsung memory particles, the opening K represents Samsung, 4 represents the memory product, A represents DDR4-SDRAM memory, 8G04 represents the capacity of 8Gb (2Gb x 4) particles, its Refresh time is 64ms, immediately encoded as 5 for 16 Banks particles, W represents the operating voltage using SSTL_12, vDD, vDDQ working voltage is 1.2V, B represents Revision B-Die particles.
The B of the back "BCWE" represents 96 ball FBGA particles, using Halogen & Lead Free environmental process Flip Chip package, C represents the operating temperature range of 0 C ~ 85 C for normal commercial particles, WE represents its speed of DDR4-3200, the specification is CL22-22-22, and the factory creates a memory module product with an operating voltage of 1.35V under the XMP specification through the screening procedure.
Performance testing:
Test platform using ASUS ROG Maximus XIII Extreme Glacial motherboard with Intel Core i9-11900K processor, operating system using Microsoft Windows 10, each set of memory settings must be runMemTest Pro* test verification to be successful, using Samsung B-Die particles, because it is a double-sided PCB, 16pcs 2G x 4 particles, So there won't be too much in terms of frequency boost.
Operating voltage
Memory performance
Memory latency
Double-sided 16GB memory module is actually difficult to exceed, without adjusting the timing and working voltage, 1.35V can exceed to DDR4-4000 CL18-22-22, and then on to power up or relax the timing, choose to relax the timing can run DDR4-4266 CL22-24-24, but the voltage needs 1.45V to pass the grill test, because gear 1 jump to Gear 2 Memory delay will be greatly improved, performance growth is not obvious, Xiao Yang believes that there is no need for overclocking.