Samsung announces the world's first computer to feature MRAM non-volatile magnetoresistive memory

On January 13, according to techpowerup, Samsung Electronics today officially announced the world's first computer equipped with MRAM memory, and the relevant paper was published on the Nature website and will be published in the journal soon. The title of the paper is "Cross-array of Magnetoresistive Storage Devices for In-Memory Computing Computers", and the related computers can be used for AI operations.

This technology was jointly developed by Samsung SAIT Research Institute and Samsung Electronics Foundry Business and Semiconductor R&D Center, and the first author of the paper is Dr. Seungchul Jung.

Most of the current computers use independent RAM memory and independent hard disk storage, but in order to improve the efficiency of computing, the industry has been developing non-volatile memory, which can take into account the functions of hard disk and memory, while helping to greatly reduce power consumption.

In order to achieve this goal, researchers have developed RRAM (resistive random access memory), PRAM (phase change random access memory), etc., and already have prototypes. The MRAM (Magnetoresistive Nonvolatile Random Access Memory) used by Samsung has the advantages of high speed, durability, and easy mass production, but due to power consumption problems, it has not been officially unveiled before.