ISSCC 2022 (IEEE International Solid-State Circuit Conference) will be held on February 24, and many manufacturers will choose to showcase the latest semiconductor manufacturing technologies at this conference. Among them, SK Hynix will introduce its latest HBM3 memory technology, with a bandwidth of 896 GB/s, and there will also be GDDR6 with a rate of 27 Gbps.
SK Hynix has been very active in the development of HBM memory, as early as last June, it showed the first HBM3 memory, providing 665 GB/s of bandwidth. Then, in October last year, SK Hynix announced the successful development of HBM3 memory, becoming the first company in the world to develop a new generation of HBM memory.
SK Hynix offers two capacities, one is 24GB of vertical stacking with 12 layers of silicon through-hole technology, and the other is 16GB of 8 layers of stacking, the former also has a chip height of only 30 microns. These HBM3 memory provide 819 GB/s of bandwidth, which is 460 GB/s higher than the bandwidth of the previous generation HBM2E, which is a 78% increase in bandwidth. In addition, HBM3 memory has built-in error correction technology on chip, improving product reliability.
The HBM3 memory brought by SK Hynix is still using 12 layers of silicon through-hole technology, and the maximum capacity is also 24GB (196Gb), but the bandwidth has been increased to 896 GB/s, and it is said that automatic calibration and machine learning optimization techniques are also used. It's unclear whether these HBM3 memories from SK Hynix are in the prototype stage or intended for mass production.
In addition, SK Hynix will also showcase the GDDR6 at a rate of 27 Gbps, using a T-coil circuit structure to achieve higher transmission speeds, faster than Samsung's highest 24 Gbps products. It has a capacity of 2GB (16Gb), the same as Samsung's GDDR6, and Micron's GDDR6X.