Apple launched the iPhone 13 series, in addition to the charging power of the mini model is still in place, the charging power of the two middle cups has exceeded 20W, the charging power of the super cup is closer to 27W, and the use of 20W chargers has been unable to meet the needs of extremely fast charging, and the use of 30W chargers to replace the traditional 18W and 20W chargers has become a wise choice.
In particular, since the beginning of this year, the popularity of gallium nitride in the fast charging ecology has significantly reduced the volume of fast charging. In the past, the volume of 5W small blocks can output 20W to 30W of power, meeting the fast charging needs of Apple's new machines. The volume is unchanged, the power density is greatly improved, and with the charging cable attached to the new machine, you can achieve extremely fast charging and enjoy the beautiful life brought by science and technology.
Huayuan Semiconductor has launched an ESOP8 package gallium nitride sealing chip HYC3602E, which integrates a gallium nitride switch tube with 650V withstand voltage and conductivity resistance of 450mΩ, which has the advantages of high cost performance and easy production, which is very suitable for 33W fast charging applications.
The figure shows Huayuan HYC3602E gallium nitride sealing chip, it can be seen that the source pole of the built-in switch tube dissipates heat through a large area of exposed copper, and the heat dissipation pad at the bottom of the chip provides an additional dissipation path for heat, and the heat dissipation energy with the via can effectively reduce the temperature rise during operation.
Huayuan Semiconductor HYC3602E has built-in intelligent multi-mode digital control, supporting CCM/DCM/PFM/burst operation mode to achieve a balance of efficiency and performance. The chip integrates a high-pressure Gallium nitride switch tube and a digital multi-mode flyback controller to eliminate the interference caused by parasitic parameters to the high-frequency switch by closing the package, and reduce the number of external components, providing a streamlined and efficient power supply solution for gaN fast charging.
The HYC3602E includes an adaptive Gallium Nitride gate driver that balances switching losses and EMI, and a jitter function improves EMI performance. The chip uses secondary side feedback to meet the wide voltage range output required for fast charging. There are a wealth of built-in protection functions, including VCC power supply overvoltage protection, transformer magnetic saturation protection, sampling resistor short circuit protection, overtemperature protection, overload protection, output overvoltage protection.
HYC3602E standby consumes less than 75mW and has a low start-up current. It also supports frequency reverse control technology, which can improve the conversion efficiency of high voltage input. It can be used in applications such as chargers, USB PD fast charging, TV and display standby power supplies, notebook adapters, etc., to improve energy efficiency and reduce costs.
Charging head net summary
33W fast charging not only supports the fast charging of new Apple mobile phones, but also the popular fast charging power of Android mobile phones, and can also carry out emergency charging for notebooks, and the application scenarios are very extensive. With the blessing of gallium nitride technology, the fast charging volume of 33W power has also been significantly reduced and has become more portable. Become the mainstream shipping model in the market.
The HYC3602E gallium nitride sealing chip launched by Huayuan Semiconductor has the advantage of high integration and the peripheral circuit is very simple. At the same time, it has a high conversion efficiency, and the full-load conversion efficiency can reach 93% at 230Vac input, which effectively reduces the full-load output temperature rise. While reducing the number of charger components, it also reduces the heat dissipation demand, effectively reducing the overall production cost.