Abstract: On December 15th, the GaN crystal release ceremony of Wuyue Semiconductor was held in the high-tech zone. Vice Mayor Gao Yaguang and others attended the ceremony.
On December 15th, Wuyue Semiconductor GaN crystal release ceremony was held in the high-tech zone. Vice Mayor Gao Yaguang and others attended the ceremony.
Wuxi Wuyue Semiconductor Co., Ltd. was established in 2019, is the first project settled in Wuxi Pilot Integrated Circuit Equipment Materials Industrial Park, the company focuses on the development, production and sales of gallium nitride self-support substrates. At the ceremony, Wuyue Semiconductor exhibited the world's first gallium nitride crystal with a thickness of more than 1 cm.
In February 2020, Wuyue Semiconductor and Pilot Group signed a cooperation agreement with the Management Committee of the High-tech Zone to implement the 2-6-inch gallium nitride self-supporting single crystal substrate industrialization project in Wuxi High-tech Zone, which can fill the gap in the field of raw materials for the third-generation compound semiconductor gallium nitride in Wuxi after the project is completed and put into operation.
At the ceremony, Wuyue Semiconductor also signed a series A financing strategic framework agreement with Legend Capital and Xintou Group.
Source: Wuxi High-tech Zone Online