As a representative of the third generation of wide bandgap semiconductor materials, silicon carbide has significant advantages in bandgap width, breakdown electric field, thermal conductivity, electron saturation rate and other indicators, and has excellent performance in the fields of high temperature, high voltage and high frequency, and has become one of the main development directions in the field of semiconductor material technology.
The silicon carbide device industry chain mainly includes three major links: substrate, epitaxy, and device manufacturing (design, manufacturing, packaging and testing).
From the perspective of technological flow, firstly, silicon carbide powder forms crystals through long crystals, and then silicon carbide substrates are obtained through slicing, grinding and polishing, epitaxial wafers are obtained by epitaxial growth, and epitaxial wafers are manufactured into devices through photolithography, etching, ion implantation, deposition and other steps. 70% of the value of the SiC industry chain is concentrated in substrates and epitaxy. The cost of silicon carbide substrate and epitaxy accounts for 47% and 23% of the entire device respectively, totaling about 70%, and the back-end device design, manufacturing, packaging and testing links only account for 30%.
From the perspective of the value distribution of the SiC industry chain, substrate manufacturers hold the core right to speak, which is the key to the breakthrough of localization. At present, local silicon carbide substrate manufacturers have begun to increase their layout efforts, and have achieved breakthroughs in technology upgrading and downstream customer introduction, and domestic substitution is advancing in an orderly manner.
As the beginning of the "Three and a Half Generations of Heroes List", this article will take stock of domestic silicon carbide substrate manufacturers to help readers better understand the development of the domestic silicon carbide industry.
SEMiBAY Bay Area Semiconductor Conference - Compound Semiconductor Forum will be held during the Bay Chip Exhibition, inviting international and domestic experts in the field of compound semiconductors, as well as GaN and silicon carbide and other materials, substrates and epitaxial equipment, power devices and module manufacturers to share the latest technology, manufacturing process, design and application trends of the third generation of semiconductors.
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Tianke Heda: a pioneer in the production and manufacturing of silicon carbide wafers in the Asia-Pacific region
Beijing Tianke Heda Semiconductor Co., Ltd., jointly established in September 2006 by Xinjiang Tianfu Group and the Institute of Physics of the Chinese Academy of Sciences, is the first national high-tech enterprise specializing in the R&D, production and sales of third-generation semiconductor silicon carbide (SiC) wafers in China. Tianke Heda currently has Beijing ABP, Beijing R&D center and three wholly-owned subsidiaries, and one holding subsidiary, Shenzhen Chongtou Tianke Semiconductor Co., Ltd.
Founded on December 15, 2020, Chongtou Tianke is a high-tech enterprise above designated size specializing in the R&D, production and sales of third-generation semiconductor silicon carbide (SiC) single crystal substrates and epitaxial wafers, focusing on the layout of 6-inch silicon carbide single crystal substrates and epitaxial production lines, with an estimated substrate and epitaxial production capacity of 250,000 pieces this year, which will further strengthen the "virtual whole industry chain (VIDM)" of Shenzhen's third-generation semiconductors.
Tianke Heda's industry covers the manufacture of silicon carbide single crystal furnaces, the preparation of silicon carbide single crystal growth raw materials, the preparation of silicon carbide single crystal substrates and the preparation of silicon carbide epitaxy. In 2022, Beijing Tianke Heda Semiconductor Co., Ltd. held a new product launch conference of "8-inch conductive silicon carbide substrate", with a total dislocation density of EPD<4000/cm2, TSD<100/cm2, and BPD<200/cm2. At present, small batches of 8-inch substrates have been shipped, and it is expected that medium batch shipments can be formed this year.
Figure: Tianke Heda 8-inch conductive silicon carbide substrate
Source: Tianke Heda official website
Tianke Heda has long been in the leading position in the field of conductive silicon carbide single crystal, and the technical gap between the domestic technology represented by Tianke Heda and the developed countries is constantly narrowing, and it is expected to achieve lane change and overtaking in the semiconductor substrate industry.
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Tianyue Advanced: A leading enterprise of SiC substrates in China
Shandong Tianyue Advanced Technology Co., Ltd. was established in November 2010, is a focus on silicon carbide single crystal substrate materials research and development, production and sales of science and technology enterprises, the main products include semi-insulating substrates and conductive substrates, has achieved 8-inch conductive substrates, 6-inch conductive substrates, 6-inch semi-insulating substrates, 4-inch semi-insulating substrates and other products of bulk supply, the main customers include domestic and foreign power electronic devices, 5G communications, automotive electronics and other well-known customers.
According to the 2023 financial report, Tianyue's market share of advanced semi-insulating silicon carbide substrates has ranked among the top three in the world for 4 consecutive years, and has signed long-term supply agreements with Infineon and Bosch, in addition, more than 50% of the world's top ten power semiconductor companies are its customers.
Figure: Tianyue Advanced main products
Source: Tianyue Advanced Financial Report
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Shuoke Crystal: A leader in the independent supply of silicon carbide materials
Shanxi Shuoke Crystal Co., Ltd. is a high-tech enterprise engaged in the R&D and production of the third-generation semiconductor material silicon carbide, established in October 2018, one of the "12 innovation platforms" of China Electronics Technology Group, and its main business is the third-generation semiconductor silicon carbide (SiC) single crystal substrate materials, the main products cover high-purity SiC powder, high-purity semi-insulating SiC single crystal substrate, N-type SiC single crystal substrate, silicon carbide crystal, etc.
In 2022, Shuoke Crystal successfully developed an 8-inch silicon carbide single crystal substrate, realizing the first small batch production of 8-inch N-type silicon carbide polishing wafers in China. According to media reports, among the main products of Shanxi Shuoke Crystal Co., Ltd., the domestic market share of 4-inch high-purity semi-insulating silicon carbide substrate exceeds 50%, which is at the forefront of the silicon carbide industry, and the 6-inch N-type silicon carbide substrate is constantly expanding its production capacity and has become its new growth point.
Figure: 8-inch N-type silicon carbide wafer
Source: Shuoke Crystal's official website
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San'an, Hunan: A vertically integrated manufacturing platform for the silicon carbide industry chain
Hunan Sanan Semiconductor Co., Ltd. is a wholly-owned subsidiary of Sanan Optoelectronics, which is committed to the development of third-generation compound semiconductor silicon carbide and gallium oxide materials, epitaxy, chips and packaging, and occupies the commanding heights of the core field of third-generation semiconductors. With more than 20 years of experience in the development and manufacturing of compound semiconductor materials, Hunan San'an can provide silicon carbide (SiC) substrates and epitaxial technologies that meet the industry's requirements for low defect rates and uniformity. Hunan San'an offers n-type and p-type epitaxial layers grown on 150mm n-type conductive silicon carbide substrates, with sufficient production capacity to meet the rapidly growing demand for silicon carbide power devices in the industrial and automotive markets.
As one of the few vertically integrated manufacturing platforms for the silicon carbide industry chain in China, Hunan San'an includes crystal growth, substrate production, epitaxial growth, chip preparation, packaging and testing. The 6-inch silicon carbide substrate has been verified by several major international customers and achieved batch shipment, the production capacity has been basically locked in the next two years, and the 8-inch substrate has been trial-produced in small batches.
In June 2023, Sanan Optoelectronics and STMicroelectronics jointly announced that the two parties have signed an agreement to jointly establish a new silicon carbide device manufacturing plant in Chongqing, China. At the same time, San'an Optoelectronics will build an 8-inch silicon carbide substrate factory as a local sole proprietorship. It is reported that the plant will use ST's patented silicon carbide manufacturing technology, and will be able to produce 10,000 8-inch silicon carbide wafers per week after reaching production. The 8-inch silicon carbide substrate factory wholly owned by Sanan Optoelectronics in Chongqing plans to invest about 7 billion yuan, and will be established and operated separately using its own silicon carbide substrate process to meet the substrate needs of the joint venture plant, and sign a long-term supply agreement with it.
Figure: 8-inch silicon carbide substrate
Source: Hunan San'an official WeChat
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Jingsheng Electromechanical: Focus on the industrialization of 6-8 inch silicon carbide substrates
Zhejiang Jingsheng Electromechanical Co., Ltd. was established in 2006, focusing on the three main semiconductor materials of silicon, sapphire and silicon carbide, developing a series of key equipment, and extending to the field of compound substrate materials, providing highly competitive high-end equipment and high-quality services for the semiconductor and photovoltaic industries.
According to the financial report disclosure, Jingsheng Electromechanical has mastered the industry's leading 8-inch silicon carbide substrate technology and process, and built a large-scale production capacity of 6-8-inch silicon carbide substrate and achieved batch shipment, and the core parameters of mass production of silicon carbide substrate have reached the industry's first-class level.
Figure: 8-inch silicon carbide wafer
Source: Jingsheng Electromechanical official website
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Tiancheng Semiconductor: It has completed the technical research of 6 and 8-inch SiC single crystal substrates
Shanxi Tiancheng Semiconductor Co., Ltd. was established in 2021 and is mainly engaged in the production of high-quality silicon carbide substrates and the manufacture of related growth equipment. Tiancheng Semiconductor's technology R&D and production involve the whole manufacturing process of silicon carbide powder synthesis, equipment design, thermal field design, and crystal growth process, forming an advantageous closed loop of silicon carbide substrate material production.
According to reports, the research team of Shanxi Tiancheng Semiconductor has achieved the preparation of automotive-grade high-quality 6-inch conductive 4H-SiC single crystal substrates, and the key dislocation defects of the substrate have been effectively controlled, and its TSD density and BPD density are much lower than those of most companies, which is at the leading level in the industry. In August 2023, Tiancheng Semiconductor also achieved a breakthrough in the research and development of 8-inch SiC single crystal technology, and developed an 8-inch SiC single crystal with a diameter of 202mm, with good parameters.
Figure: High-purity semi-insulating substrate
Source: Tiancheng Semiconductor's official website
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Tongguang Co., Ltd.: a leading supplier of silicon carbide substrates in China
Hebei Tongguang Semiconductor Co., Ltd. was established in 2012 and is located in Baoding High-tech Development Zone, mainly engaged in the research and development and production of silicon carbide substrates, the third-generation semiconductor material. Tongguang's main products include 4-inch and 6-inch conductive, semi-insulating silicon carbide substrates.
At the technical and product level, Tongguang Co., Ltd. focuses on key technologies such as high-purity silicon carbide raw material synthesis, defect control, impurity content, and product excellence rate, and has built a SiC single crystal substrate production line with advanced technology, complete production line, and independent control, including 4-inch, 6-inch high-purity semi-insulating and conductive SiC single crystal substrate materials. Among them, the 6-inch N-type SiC substrate has made key engineering breakthroughs and reached the application standard of automotive-grade power semiconductor chips.
According to media interviews and reports, Tongguang Co., Ltd.'s 8-inch silicon carbide monocrystalline substrate has achieved a technological breakthrough, waiting for the downstream of the industry to transform to 8-inch large-scale production, and new products can be quickly put on the market.
Figure: 6-inch high-purity semi-insulating silicon carbide substrate
Source: Tongguang official website
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Qianjing Semiconductor: "Pioneer" in the field of domestic third-generation semiconductor materials
Hangzhou Qianjing Semiconductor Co., Ltd., established in July 2020 in Hangzhou International Science and Technology Innovation Center of Zhejiang University, focuses on the field of third-generation semiconductor materials, and is a high-tech enterprise integrating semiconductor silicon carbide single crystal growth, wafer processing and equipment development. The core team of Qianjing Semiconductor comes from the State Key Laboratory of Silicon Materials of Zhejiang University, and has also established a joint laboratory with the Advanced Semiconductor Research Institute of the Science and Technology Innovation Center of Zhejiang University to jointly undertake the industrialization of SiC materials.
According to the information on the official website, in May 2023, after a series of technical breakthroughs, a breakthrough was made in the growth of large-size silicon carbide (SiC) single crystal and its substrate preparation, and an 8-inch n-type silicon carbide single crystal ingot with a thickness of 27 mm was successfully grown, and an 8-inch silicon carbide substrate was processed, successfully entering the 8-inch silicon carbide club.
Figure: 8-inch conductive 4H-SiC substrate
Source: Qianjing Semiconductor official website
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Nansha Wafer: Seize the opportunity of 8-inch silicon carbide substrate
Guangzhou Nansha Wafer Semiconductor Technology Co., Ltd., established in September 2018, is a national high-tech enterprise engaged in the R&D, production and sales of silicon carbide single crystal materials. Headquartered in Nansha District, Guangzhou, the company has three production bases in Guangzhou, Zhongshan and Jinan, forming a complete production line of silicon carbide single crystal furnace manufacturing, silicon carbide powder preparation, silicon carbide single crystal growth and substrate preparation, and the products are mainly 6 and 8-inch conductive and semi-insulating silicon carbide substrates.
In terms of projects, Nansha Wafer has also laid out a SiC project in Nansha District, Guangzhou, with a total investment of 900 million yuan, which has been put into trial production in April 2023, with an annual output of 200,000 pieces of various substrates and epitaxial wafers after reaching production. The project filing means that the 8-inch SiC monocrystalline and substrate project of Nansha Wafer has been officially launched, and with the completion of the project, it will be conducive to Nansha Wafer to seize the opportunity after the comprehensive transformation of SiC substrate to 8-inch in the future.
Figure: 8-inch conductive 4H-SiC substrate
Source: Nansha Wafer official website
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Keyou Semiconductor: A breakthrough in the 8-inch silicon carbide growth process
Harbin Keyou Semiconductor Industry Equipment and Technology Research Institute Co., Ltd., established in May 2018, is a technology research and development high-tech enterprise, focusing on semiconductor equipment research and development, substrate manufacturing, device design, technology transfer and transformation of scientific research achievements.
Keyou Semiconductor has formed a self-developed key technology for the growth of 6-8 inch silicon carbide crystals and 2-4 inches of aluminum nitride crystals, and the thickness of 6-inch silicon carbide crystals has successfully exceeded 40mm. At present, there is 1 production line of crystal growth furnace, with an annual output of 200 sets of crystal growth furnace, one set of high-purity graphite processing equipment and one set of high-purity silicon carbide raw material preparation equipment, and 1 6-8 inch silicon carbide crystal production line with an annual output of 100,000 pieces of 6-8 inch silicon carbide substrate.
It is reported that Keyou Semiconductor has further reduced the dislocation defect density on the basis of zero microtubule defects through a number of exclusive technologies such as powder purification and precrystallization treatment, application of evaporation tantalum carbide (TaC) evaporation graphite structural parts, thermal field structure design, seed crystal coating back protection, etc., with a 6-inch crystal dislocation defect density of < 3000 cm-2, an 8-inch crystal microtubule density of < 0.1 cm-2, and a dislocation defect density of <5000 cm-2, and the crystal quality is at the industry-leading level.
Figure: Keyou Semiconductor's 8-inch silicon carbide substrate
Source: Keyou Semiconductor's official WeChat
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Tony Electronics: A rookie of domestic silicon carbide substrates
Zhejiang Tony Electronics Co., Ltd. was founded in 2008, focusing on the application research and development, production and sales of ultra-fine alloy wires, metal matrix composites and other new materials. The products are mainly used in five fields: consumer electronics, medical treatment, solar photovoltaic, new energy vehicles, and new semiconductor materials.
In 2017, Tony Electronics reserved for the research and development of SiC projects, and in 2021, raised 330 million yuan to increase the production capacity of SiC substrates. According to the 2023 semi-annual report, in January 2023, Tony Semiconductor, a subsidiary, signed a "Purchase Contract" with downstream customer T, agreeing that Tony Semiconductor will deliver 135,000 pieces of 6-inch silicon carbide substrates to the customer in 2023, and 300,000 pieces and 500,000 pieces of 6-inch silicon carbide substrates will be delivered to the customer in 2024 and 2025, respectively.
According to the official website, the cutting-edge technology adopted by Tony has broken through the key problems such as large-diameter growth, multi-type control, stress and dislocation defect reduction of silicon carbide single crystal materials, and solved the bottleneck problem of controlling the number of silicon carbide crystal growth defects and crystal quality, so as to obtain high-quality, large-size silicon carbide single crystal materials. At present, the 8-inch silicon carbide substrate is in the R&D and verification stage, and there are small batch orders, and the follow-up will continue to focus on technical process research and development, and continue to promote the verification and mass production process.
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Hefei Roxiao: Make every effort to lay out the silicon carbide industry
Hefei Roshow Semiconductor Materials Co., Ltd. is a joint venture subsidiary of Roshow Technology Co., Ltd., established in October 2020 with a registered capital of 575 million yuan, located in Hefei, the city of science and technology. The first phase of the company's third-generation power semiconductor (silicon carbide) industrial park project has invested 2.1 billion yuan, and the first phase has been put into operation, with an annual output of 240,000 pieces of 6-inch silicon carbide substrates.
According to the information on the official website, Hefei Roshow silicon carbide business is mainly for the production and sales of 6-inch conductive silicon carbide substrates, and 8-inch is currently under development.
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summary
According to TrendForce, the 6-inch silicon carbide industry currently dominates the 6-inch industry, accounting for nearly 80% of the market share, while the 8-inch industry accounts for less than 1%. The expansion of the wafer size of 8 inches is the key to further reducing the cost of silicon carbide devices. If it reaches the maturity stage, the price of an 8-inch monolith is about 1.5 times that of a 6-inch wafer, and the number of grains that can be produced by an 8-inch wafer is about 1.8 times that of a 6-inch SiC wafer, and the wafer utilization rate is significantly improved.
The industry trend of 6-inch to 8-inch expansion is obvious, and the 8-inch SiC substrate contains the opportunity for domestic manufacturers to achieve corner overtaking. Starting in 2023, domestic and foreign manufacturers are accelerating the development of 8-inch silicon carbide to overcome technical challenges and gain a more considerable market share.