Abstract:IGBT is known as the "CPU" of the power electronics industry, and its application is widespread, and it is deeply involved in many key fields such as motor energy saving, rail transit, and new energy vehicles. Especially in the field of rail transit, IGBT technology has made a major breakthrough. In the field of new energy vehicles, IGBT is an indispensable core device for electronic control systems and DC charging piles. In recent years, with the advancement of technology and the surge of market demand, the output of IGBT in mainland China has shown a rapid growth trend. In 2022, China's IGBT output will reach 30.58 million, a year-on-year increase of 18.53%. In the future, with the in-depth promotion of domestic substitution, the mainland IGBT industry will usher in a broader development prospect and make important contributions to the sustainable prosperity of the power electronics industry.
1. Definitions and Classification
Insulated gate bipolar transistor (IGBT) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar triode) and MOS (insulated gate field effect transistor), which has the advantages of high input impedance of MOSFET and low on-voltage drop of GTR, and is very suitable for use in converter systems with DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, traction drives and other fields. Insulated gate bipolar transistors can be divided into IGBT chips, FRD chips, IGBT single tubes, IGBT modules, and IPM modules according to different product integration forms.
Second, industry policies
1. Competent authorities and regulatory system
The competent authority of the insulated gate bipolar transistor industry is the Ministry of Industry and Information Technology. The Ministry of Industry and Information Technology (MIIT) is responsible for proposing strategies and policies for the development of new industrialization, coordinating and solving major problems in the process of new industrialization, and promoting the strategic adjustment, optimization and upgrading of the industrial structure; formulating and organizing the implementation of industry plans, plans and industrial policies for the industrial and telecommunications industries; monitoring and analyzing the operation situation of the industrial and telecommunications industries, collecting statistics and publishing relevant information, carrying out forecasting, early warning and information guidance; guiding technological innovation and technological progress in the industry, and transforming and upgrading traditional industries with advanced and applicable technologies.
The Insulated Gate Bipolar Transistor Industry Self-Regulatory Association is the China Semiconductor Industry Association. China Semiconductor Industry Association is mainly responsible for implementing the relevant government policies and regulations, putting forward advice and suggestions on the economic, technical and equipment policies for the development of the industry to the government business departments, doing a good job in information consultation, investigating, researching and predicting the industry and market of the industry, collecting the requirements of enterprises, and reflecting the voice of industry development, extensively carrying out economic and technological exchanges and academic exchange activities, carrying out international exchanges and cooperation, formulating (revising) industry standards, national standards and recommended standards, etc.
2. Industry-related policies
In recent years, the Chinese government has introduced a series of policies and measures to encourage and support the research and development and application of power semiconductor devices such as insulated gate bipolar transistors. In January 2023, the Ministry of Industry and Information Technology and other six departments issued the "Guiding Opinions on Promoting the Development of the Energy Electronics Industry", proposing to develop high-temperature, high-voltage, low-loss, and high-reliability IGBT devices and modules for new energy, as well as advanced wide-bandgap semiconductor materials such as SiC and GaN, advanced topology and packaging technologies, new power electronic devices and key technologies, for photovoltaics, wind power, energy storage systems, semiconductor lighting, etc. The policy clarifies the development direction of insulated gate bipolar transistors, and promotes the insulated gate bipolar transistor industry to make greater breakthroughs in technological innovation, improve product performance and reliability, and meet the demand for efficient and reliable electronic power devices in the field of new energy.
Third, the development process
After years of development, the insulated gate bipolar transistor has developed to the seventh generation, and the performance of all aspects has been continuously optimized, the substrate has changed from PT feed-through, NPT non-pass-through to FS field cut-off, gate from plane to Trench trench, and finally to the seventh generation of fine trench trench. With the upgrading of technology, the chip area, process line width, on-state power consumption, turn-off time, and switching power consumption are all decreasing, and the off-state voltage has increased from 600V in the first generation to 7000V in the seventh generation.
Fourth, industry barriers
1. Technical barriers
As the core device in the field of power electronics, the design and manufacture of insulated gate bipolar transistors involve complex technologies and processes. At present, the core technology of IGBT is mainly in the hands of enterprises in developed countries, especially high-voltage, high-current IGBT products, which are more difficult to design and manufacture. There is still a certain gap between Chinese companies and developed countries in terms of IGBT chip design, material selection, process control, etc. In addition, IGBT has a wide range of applications, such as new energy vehicles, rail transit, smart grids, etc., which have extremely high requirements for the performance and reliability of IGBTs, which further increases the technical barriers.
2. Market barriers
Due to the particularity of IGBT products, its market demand has a certain concentration and stability. Internationally renowned enterprises have established a perfect sales network and customer relationships around the world, occupying a large market share. When Chinese enterprises enter the international market, they need to face fierce competition and a complex trade environment. At the same time, the domestic IGBT market also shows a certain oligopoly situation, and it is difficult for new entrants to gain market share.
3. Industrial ecological barriers
The development of the IGBT industry requires the support of a complete industrial chain and ecosystem, including raw material supply, equipment manufacturing, packaging and testing, etc. At present, the global IGBT industry chain has formed a relatively stable pattern, and enterprises in developed countries have strong bargaining power and voice power in the upstream of the industrial chain. If Chinese enterprises want to make breakthroughs in the IGBT field, they need to build a complete industrial chain and ecosystem to achieve independent and controllable.
Fifth, the industrial chain
1. Analysis of the industry chain
The upstream of the insulated gate bipolar transistor industry chain is mainly a supplier of raw materials and equipment, of which the raw materials are mainly silicon wafers, photoresists, packaging materials, etc., and the equipment is mainly process manufacturing equipment and testing equipment, etc.; the middle of the industrial chain is a manufacturer of insulated gate bipolar transistors; and the downstream application fields of the industrial chain include industrial control, consumer electronics, home appliances, new energy vehicles, smart grids, etc.
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