Preface
This issue brings a 140W PD3.1 GaN charger solution launched by Gangsheng Electronics, which uses Infineon's XDPS2221 adaptive PFC+ hybrid flyback 2-in-1 controller and GaN half-bridge devices, which is very suitable for single-port PD fast charging and wide voltage output applications.
This GaN charger solution supports a wide voltage input of 100-240Vac, supports 140W PD3.1 fast charging output, supports 3.3-21V5A PPS fast charging output, and also supports 33W UFCS fusion fast charging, which has good fast charging compatibility. The following charging head network will bring the analysis of the 140W gallium nitride charger scheme of Gangsheng Electronics, and take a look at the internal scheme and materials.
The appearance of the 140W gallium nitride charger scheme of Gangsheng Electronics
This charger is designed based on the PD3.1 140W gallium nitride fast charging solution of Gangsheng Electronics, and the body adopts a PC flame-retardant material shell, and the surface is frosted and anti-fingerprint. As a sample, the fuselage case as a whole is not printed with any information.
The design of the charger is equipped with foldable American pins, which meets the mainstream needs and is convenient for users to carry out.
The measured height of the charger is 68.28mm.
The width is 67.84mm.
The thickness is 30.67mm.
In addition, the weight of the charger was measured to be about 227g.
PDO报文显示USB-C口具备5v3a、9v3a、12v3a、15v3a、20v5a、28v5a六组固定电压档位,以及3.3-21v5a一组 PPS电压档位.
It is measured that UFCS fusion fast charging has two sets of voltage ranges: 3.3-5.5V3A and 5.5-11V3A.
Gangsheng Electronics 140W gallium nitride charger solution test
EN55032 CLASS B CONDUCTION TESTS MEET STANDARDS AND HAVE LARGE MARGINS.
EN55032 CLASS B RADIATION TESTING IS ALSO STANDARD-COMPLIANT AND HAS A LARGE MARGIN.
Analysis of the 140W gallium nitride charger scheme of Gangsheng Electronics
After having a basic understanding of the PD3.1 gallium nitride charger scheme of Gangsheng Electronics, the following will be disassembled and the internal scheme design will be analyzed.
First, disassemble the charger housing along the seam of the housing, and the folding pins are welded through the wires.
There is a heat sink on the front of the PCBA module.
There is also a heat sink on the back of the PCBA module.
The heat sink is pasted with a thermal pad to dissipate heat from the components on the back of the PCBA module.
The measured weight of the PCBA module is about 185.5g.
The length of the PCBA module measured by vernier calipers is about 64.9mm.
The width of the PCBA module is about 62.7mm.
The thickness of the PCBA module is about 26.1mm.
Remove the heat sink on the front and back of the PCBA module, in which the front heat sink is fixed by welding, and the transformer and other components are glued to dissipate heat.
The front of the PCBA module is at a glance, the left side is welded with fuse, varistor, common mode inductor, and the upper left corner is welded with a safety X2 capacitor and a rectifier bridge. The right side is welded with the filter inductor and filter capacitor, the right side is welded with the PFC boost inductor, the output filter capacitor and the USB-C female board are welded in the upper right corner, and the high voltage filter capacitor, resonant capacitor and transformer are welded on the left side below.
The back of the PCBA module is welded with PFC+HFB two-in-one controller, PFC switch tube, PFC rectifier tube, gallium nitride half-bridge chip, synchronous rectifier controller and synchronous rectifier tube on the right side, and a feedback optocoupler is welded between the primary stage.
The rectifier bridge is from Wald, the model is RBU1506L, the specification is 15A600V, and it has the advantages of low temperature rise and low height.
The charger main control chip uses Infineon's XDPS2221 to package the PFC controller and the HFB controller together, which saves board space and brings significant performance improvements. Infineon's XDPS2221 integrates three gate drivers for PFC drives and half-bridge switch drives. The chip is integrated with a coreless transformer drive, which has high withstand voltage and strong anti-interference ability, which significantly improves the reliability of the product. Both the drive current and the current slope can be adjusted to optimize EMI characteristics.
Infineon's XDPS2221 can be flexibly used with MOSFETs and GaN, with built-in high-voltage drivers and very simple circuitry, which effectively reduces the number of parts and costs. In contrast to direct-drive MOSFETs, GaN devices can be used directly by adding a clamping circuit for the drive circuit.
The PFC switch from Infineon, model number GS-065-011-1-L, is a 650V reinforced GaN switch with 150mΩ conduction resistance in a 5*6mm PDFN package.
PFC boost inductors are tightly wound and insulated with adhesive tape.
The PFC rectifier is a silicon carbide diode with 650V withstand voltage and 150°C continuous forward current of 6A from Zhongrui Hongxin HX1D06065R Semiconductor, which is a 650V withstand voltage and 150°C continuous forward current of 6A, which is in DFN5*6 package, ultra-thin package saves volume, and is suitable for high-power GaN fast charging applications with high power density.
The core parameter table of Zhongrui Hongxin Semiconductor HX1D06065R is shown in the figure.
The half-bridge GaN chip from Infineon, model IGI60F1414A, integrates two 140mΩ conduction, 600V GaN switch tubes, connected in the form of a half-bridge, and has an independent isolation driver, which greatly saves the PCB footprint. IGI60F1414A1L supports 400W half-bridge applications, the GaN devices with built-in drivers greatly simplify the design of the driver circuit and can be optimized for the design.
The transformer is tightly wound with tape insulation.
Zhaolong CT1019 optocoupler is used for output voltage feedback regulation.
The synchronous rectification controller from NXP, model TEA2093, supports asymmetric flyback and flyback applications, and has a built-in adaptive gate drive.
The synchronous rectifier tube is from China Resources Micro, model CRSM038N10N4, NMOS, withstand voltage 100V, conduction resistance 3mΩ, and DFN5*6 package.
A protocol chip is soldered on the front of the protocol board.
The back side is welded with a VBUS switch tube.
The output VBUS switch is from MPSEN, model SLN30N03T, NMOS, withstand voltage 30V, conduction resistance 6mΩ, and adopts DFN3*3 package.
Summary of the charging head network
Finally, a list of core components of the 140W gallium nitride charger of Gangsheng Electronics is attached for your convenience.
Through analysis, the charging head network found that the PCBA module inside the 140W gallium nitride charger of Gangsheng Electronics is wrapped with an aluminum alloy heat sink, and a thermal conductive pad is provided inside, and it is coated with thermal conductive adhesive to strengthen heat dissipation. The internal power supply solution of the charger is from Infineon and uses a XDPS2221 PFC+HFB 2-in-1 controller.
The PFC switch and gallium nitride half-bridge are made of Infineon GS-065-011-1-L and IGI60F1414A1L respectively, and the PFC rectifier is made of Zhongrui Hongxin HX1D06065R silicon carbide diode. The synchronous rectifier controller adopts NXP TEA2093 and is matched with the synchronous rectifier tube CRSM038N10N4 CR Micro. The protocol chip adopts Yingjixin IP2756. The solution uses hybrid flyback to improve conversion efficiency, and the protocol support is comprehensive.