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A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

author:Charging head net

Preface

In the long run, silicon as the core material of various chips, power devices and other semiconductor components appeared in a large number of various consumer electronic products, profoundly affecting people's lives, but in recent years, major mobile phone manufacturers have competed to be the "volume king", and gradually increased the mobile phone fast charging power from the earliest 5W all the way to more than 100W. Although consumers have benefited, engineers have to face more problems when designing high-power fast charging adapters. Traditional silicon devices perform generally in high-frequency and high-voltage scenarios, and are used to design fast charging with excessive volume, which is quite inconvenient to carry out. For this reason, there is an urgent need for new semiconductor materials.

As a third-generation semiconductor material, gallium nitride has many advantages such as high hardness, large bandgap width, high withstand voltage and high thermal efficiency, so the power devices made of gallium nitride materials can operate stably in high-frequency, high-efficiency and high-temperature environments, while having low conduction resistance and low heat dissipation pressure, which is very suitable for today's high-power fast charging applications with hundreds of watts.

Summary of 100-watt multi-port fast-charging gallium nitride switch application cases

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

When sorting out the dismantling cases of 100-watt multi-port GaN fast charging from January to March, the charging head network found that a number of GaN switchtubes from Navitas, Infineon and Innoso were adopted by many well-known fast charging brands. Some of the parameters of the four protocol chips that appear in the article are shown in the figure, and the following editor will introduce them to you in detail.

Navitas NV6123

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

The Navitas NV6123 is a GaN power IC, a thermally enhanced version of the NV6113, optimized for high frequency and soft-switching topologies, with an integrated driver withstand voltage of 650V, 300mΩ conduction, and a 6*8mm QFN package.

Application examples

140W 3C1A four-port GaN charger with moving speed

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

The GaN charger comes in a lava yellow colorway, and the charger has a neat square shape with folding pins for easy daily carrying and storage. The charger has a 3C1A interface, the USB-C1 interface supports 140W output, the USB-C2 interface supports 100W output, and the other two interfaces also support fast charging, and supports automatic power distribution, which can meet the simultaneous charging of multiple devices such as laptops and mobile phones.

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Teardown report: 140W 3C1A four-port GaN charger with moving speed

Navitas NV6125

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

Navitas' NV6125 GaN Power Switch has a built-in driver, no external driver required, 175mΩ conduction, withstand voltage 650V, supports 2MHz switching frequency, and adopts a thermally enhanced QFN6*8mm package, which is suitable for many applications such as step-up, step-down, half-bridge, full-bridge switching power supplies.

Application examples

Kevo 140W Dual USB-C GaN Charger

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

This 140W GaN charger comes in a white case with folding pins, which is beautiful and practical, and easy to carry. The charger is equipped with two USB-C ports, both of which support 140W output and support automatic power distribution. It can meet the fast charging needs of Apple MacBook Pro laptops, and can also be used for PD3.1 power bank high-power fast charging. The charger output is equipped with an indicator light to indicate the power status.

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Teardown Report: Kevo 140W Dual USB-C GaN Charger

Navitas NV6136C

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

The Navitas NV6136C is a highly integrated GaN power IC with a built-in driver and a high-precision, lossless current sensing circuit that eliminates the loss of sampling resistors. NV6136C built-in 170mΩ on-resistance, 700V GaN switch with 2MHz switching frequency, 6*8mm QFN package, saving area.

Application examples

Greenlink 100W 2C1A Three-Port GaN Fast Charger

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

This 100W gallium nitride charger adopts a sliced cylindrical design, and the word 100W is marked on the side of the fuselage to make it easy to identify the output power of the charger. The charger comes with folding prongs for easy daily carrying and storage. The charger has a 2C1A interface, a USB-C1 port that supports 100W fast charging output, and also supports UFCS fast charging. The USB-C2 and A ports also support fast charging output and automatic power distribution.

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Teardown report: Greenlink 100W 2C1A three-port gallium nitride fast charger

英飞凌IGLD60R190D1

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

Infineon's IGLD60R190D1 is a 600V reinforced GaN single tube with 140mΩ conduction resistance in a PG-LSON-8-1 package that supports industrial, telecom and data center switching power supply applications, hard and soft switching half-bridges, totem-pole PFC and high-frequency LLC applications.

Application examples

Greenlink 160W 3C1A Four-Port GaN Fast Charger

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

This 160W GaN charger has a square design and is equipped with folding pins, which is easy to carry and store on a daily basis. The charger has 3C1A interface, USB-C1 interface supports 140W PD3.1 fast charging and UFCS fusion fast charging, USB-C2 interface supports 100W fast charging, USB-C3 and USB-A ports also support fast charging output, and supports automatic power distribution, meeting the needs of mobile phones and laptops for fast charging at the same time.

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Teardown report: Greenlink 160W 3C1A four-port GaN fast charging charger

英诺赛科INN650D150A

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

Innoscience INN650D150A is a 650V GaN high-voltage single tube, with a transient withstand voltage of 750V and a conduction resistance of 150mΩ, in a DFN8*8 package. INN650D150A supports ultra-high switching frequency, no reverse recovery charge, has very low gate charge and output charge, meets the requirements of industrial applications in JEDEC standards, has built-in ESD protection, and is RoHS, lead-free, and EU REACH compliant.

Application examples

传音infinix 180W USB-C氮化镓快充充电器

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

The Infinix GaN charger is designed with a white case and European fixed pins. The charger is equipped with a single USB-C interface, supports 20V9A 180W private fast charging, and has 100W PD fast charging and 3.3-21V5A PPS fast charging, which has good fast charging compatibility for Android mobile phones and laptop charging.

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Teardown report: Transsion infinix 180W USB-C GaN fast charger

英诺赛科INN650DAH260

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

Innoscience's INN650DAH260 is a customized part number for Olympian, with the same parameters as the INN650D260A, with a rated withstand voltage of 650V and a conduction resistance of 260mΩ, which meets the requirements of industrial applications according to JEDEC standards, supports ESD protection, and supports Kelvin sources. It has a maximum operating temperature of 150°C and is available in a DFN 5×6 package.

Application examples

vivo 120W USB-C闪充氮化镓充电器

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

vivo's 120W ultra-fast flash charger adopts a classic white straight body design, and the charger is equipped with fixed GB pins, making it compact in size. The charger is equipped with a single USB-C port, supports 20V 6A 120W vivo FlashCharge, and has a 65W PD fast charging output, which can meet the needs of high-power charging of mobile phones and can also charge laptops.

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Teardown report: vivo 120W USB-C Flash Charge GaN Charger

英诺赛科INN700D140C

The Innoscience INN700D140C is an enhanced GaN single tube with a withstand voltage of 700V, and the device is upgraded to 700V from the original 650V withstand voltage and the transient withstand voltage is 800V. The device has a conduction resistance of 106mΩ to support higher power applications.

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

INN700D140C supports ultra-high switching frequency, no reverse recovery charge, has very low gate charge and output charge, meets the requirements of JEDEC standard industrial applications, built-in ESD protection, RoHS, lead-free, EU REACH regulations, and is suitable for AC-DC conversion, DC-DC conversion and other high-efficiency and high-density applications. It is available in DFN8*8 package.

Application examples

Aohi 140W 2C1A GaN Charger (Lite)

A perfect alternative to traditional silicon devices, these GaN devices are selected to effectively reduce fast charging losses

The AOHI 140W GaN Charger (Youth Edition) is designed with a square case and is equipped with GB fixed pins, which is convenient for daily carrying and storage. The charger has 2C1A interface, USB-C1 interface supports 140W PD3.1 fast charging, USB-C2 interface supports 100W fast charging, all three ports support fast charging output, and supports automatic power distribution, which can quickly charge two laptops at the same time, with strong performance.

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Teardown Report: Aohi 140W 2C1A GaN Charger (Lite Edition)

Summary of the charging head network

As a third-generation semiconductor material, gallium nitride has become an ideal choice for high-power fast charging due to its stable operation performance in high-frequency, high-efficiency, and high-temperature environments, as well as many advantages such as low conduction resistance and small heat dissipation pressure. With GaN power switches from Navitas, Infineon, Innoscience and other manufacturers, fast chargers can achieve higher power output and faster charging speeds, meeting consumers' needs for efficient and fast charging.

Through a number of cases in the article, we can see that gallium nitride switches are widely used in 100-watt multi-port fast charging. Among the products of brands such as Mobile, Kewo, Greenlink, Transsion Infinix, vivo, and Aohi, GaN technology can achieve high power output in a more compact design, making the charger more portable, easy to carry and store.

It is believed that with the continuous progress of GaN technology and the expansion of application scenarios in the future, more innovative fast charging products will appear, which are expected to further improve fast charging efficiency and reduce manufacturing costs, so that fast charging equipment can be applied in a wider range of scenarios, bringing more efficient and convenient charging experience to people's lives.